碲镉汞APD焦平面技术研究  

Study on HgCdTe APD focal plane technology

作　　者：李雄军[1] 张应旭 陈虓[1] 李立华[1] 赵鹏[1] 杨振宇[2] 杨东 姜炜波[1] 杨鹏伟[1] 孔金丞[1] 赵俊[1] 姬荣斌[1] LI Xiong-Jun;ZHANG Ying-Xu;CHEN Xiao;LI Li-Hua;ZHAO Peng;YANG Zhen-Yu;YANG Dong;JIANG Wei-bo;YANG Peng-wei;KONG Jin-Cheng;ZHAO Jun;JI Rong-Bin(Kunming Institute of Physics,Kunming 650223,China;Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]昆明物理研究所,云南昆明650223 [2]华中科技大学,湖北武汉430074

出　　处：《红外与毫米波学报》2022年第6期965-971,共7页Journal of Infrared and Millimeter Waves

基　　金：云南省科技人才与平台计划项目(202105AD160047)。

摘　　要：采用LPE生长的中波碲镉汞材料,通过B离子注入n-on-p平面结技术制备了规模为256×256,像元中心距为30μm的碲镉汞APD焦平面探测器芯片。在液氮温度下对其增益、暗电流以及过噪因子等性能参数进行了测试分析,结果表明,所制备的碲镉汞APD焦平面芯片在-8.5 V反偏下平均增益达到166.8,增益非均匀性为3.33%;在0~-8.5 V反向偏置下,APD器件增益归一化暗电流为9.0×10^(-14)~1.6×10^(-13)A,过噪因子F介于1.0~1.5之间。此外,还对碲镉汞APD焦平面进行了成像演示,并获得了较好的成像效果。A 256×256 HgCdTe APD hybrid focal plane array(FPA)with 30μm pixel pitch was prepared by B ion im‐plantation n-on-p planar junction technology based on MW HgCdTe material grown by LPE.The performance parame‐ters such as gain,dark current and noise factor were characterized and analyzed at liquid nitrogen temperature.The re‐sults show that the average gain of HgCdTe APD focal plane chip is 166.8 and the gain non-uniformity is 3.33%under-8.5V reverse bias;Under 0~-8.5V reverse bias,the gain normalized dark current of APD device is 9.0×10^(-14)A~1.6×10^(-13)A,the noise factor F is between 1.0 and 1.5.In addition,the imaging demonstration of HgCdTe APD focal plane is carried out,and a good imaging effect is obtained.

关 键 词：碲镉汞 APD 增益 暗电流 过噪因子 

分 类 号：TN215[电子电信—物理电子学]