MOCVD方法生长氧化锌薄膜及其极性表面发光特性  

The luminescence properties of polar surfaces of MOCVD grown ZnO films

作　　者：王剑宇 王立[1] WANG Jianyu;WANG Li(Department of Physics,Nanchang University,Nanchang 330031,China)

机构地区：[1]南昌大学物理学系,江西南昌330031

出　　处：《南昌大学学报（理科版）》2022年第6期607-610,620,共5页Journal of Nanchang University(Natural Science)

基　　金：国家自然科学基金资助项目(62005112)。

摘　　要：氧化锌ZnO由于其高激子束缚能等特点在光电器件等方面表现出广泛的应用,制备高质量ZnO薄膜并研究其发光性能有着重要的意义。本文通过MOCVD方法在不同晶面的蓝宝石衬底上生长了不同极性表面的ZnO薄膜。扫描电子显微镜和阴极射线荧光表征结果显示得到的ZnO薄膜结晶度较好,且H2刻蚀对得到平整的ZnO表面有着重要作用。光谱测量结果显示ZnO极性面的带边发光强度要明显高于非极性面,这一发光衰减和非极性面的表面缺陷直接相关。本文的对于研究ZnO薄膜外延生长有着重要的意义,有助于进一步的光电器件应用。ZnO finds wide applications in photoelectronic devices due to its advantage of high binding energy.The fabrication of high quality ZnO film and the investigation on the luminescence properties have great importance.Here, ZnO films with varied polar surfaces were grown on different sapphire substrate surfaces by the MOCVD method.The scanning electron microscope and the cathodoluminescence characterizations indicated the high crystalline quality of ZnO,and the H2etching played an important role in obtaining a smooth surface.The spectra measurements showed that the bandgap emission of ZnO polar surface is stronger than non-polar surface, which is attributed to the defects on the non-polar surface.The results showed significant importance on the epitaxial growth of ZnO films, which is helpful in the applications in photoelectronic devices.

关 键 词：凝聚态物理 ZNO薄膜 蓝宝石衬底 MOCVD 阴极射线荧光 

分 类 号：O4[理学—物理]