GaN基互补型逻辑电路的研究进展及挑战  

Research Progress and Challenges of GaN-Based Complementary Logic Circuits

作　　者：张彤 刘树强 何亮 成绍恒[3] 李柳暗[3] 敖金平 ZHANG Tong;LIU Shuqiang;HE Liang;CHENG Shaoheng;LI Liu’an;AO Jinping(School of Artificial Intelligence,Zaozhuang University,Zaozhuang 277160,China;No.5 Electronics Research Institute,Ministry of Industry and Information Technology,Guangzhou 510610,China;State Key Laboratory of Superhard Materials,Jilin University,Changchun 130012,China;School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]枣庄学院人工智能学院,山东枣庄277160 [2]工业和信息化部电子第五研究所,广州510610 [3]吉林大学超硬材料国家重点实验室,长春130012 [4]江南大学物联网工程学院,江苏无锡214122

出　　处：《电子与封装》2023年第1期1-10,共10页Electronics & Packaging

基　　金：国家自然科学基金(61904207);四川省自然科学基金(22NSFSC0886)。

摘　　要：氮化镓(GaN)基异质结场效应晶体管具有工作频率高、导通损耗低等优点,已经开始广泛应用在多种高频、高效功率转换器中。为了充分发挥GaN功率器件的潜能,需要将功率开关器件和控制器、驱动等外围电路进行全GaN单片集成以减少寄生参数。互补型逻辑电路是实现集成的关键元电路之一,但其研究起步较晚。介绍了n沟道和p沟道GaN增强型器件的制备方案及互补逻辑电路的研究进展。从电学性能匹配性及稳定性出发探讨了现有互补型逻辑电路面临的关键科学问题,可以为GaN基互补型逻辑电路的研究提供参考。GaN-based heterojunction field effect transistors have the advantages of high operating frequency and low conduction loss,which have begun to be widely used in a variety of high frequency,high efficiency power converters.In order to fully utilize the potential of GaN power devices,the power switching devices and peripheral circuits such as controllers and drivers need to be fully GaN monolithically integrated to reduce parasitic parameters.The complementary logic circuit is one of the key elements to realize integration,but their research started late.The fabrication schemes of n-channel and p-channel GaN enhance devices and the research progress of complementary logic circuits are introduced.The key scientific problems for the existing complementary logic circuits are discussed from the perspective of electrical performance matching and stability,which can provide some reference for the research of GaN-based complementary logic circuits.

关 键 词：GAN 功率集成电路 增强型器件 互补金属-氧化物-半导体 逻辑电路 稳定性 

分 类 号：TN432[电子电信—微电子学与固体电子学]