微波氮化镓肖特基二极管及其应用  

Microwave GaN Schottky Diode and Its Application

作　　者：李秋璇 李杨 王霄 陈治伟 敖金平 LI Qiuxuan;LI Yang;WANG Xiao;CHEN Zhiwei;AO Jinping(School of Internet of Things Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《电子与封装》2023年第1期52-62,共11页Electronics & Packaging

基　　金：国家自然科学基金青年项目(No.62104183)。

摘　　要：氮化镓肖特基二极管(GaN SBD)因其击穿电压高、导通电阻小、电容小,被广泛应用于微波、毫米波电路。然而,微波、毫米波频段的GaN SBD仍然存在诸多不足,如开启电压较高,漏电过大等。汇总、分析了若干种类的GaN SBD,并阐述了多种改善二极管关键参数的方法和技术。罗列了近年来基于GaN SBD的微波、毫米波整流电路和倍频电路,并讨论其电性能与二极管关键参数的关系,对GaN SBD未来的发展方向进行了展望。GaN Schottky barrier diode(GaN SBD)is widely used in microwave and millimeter wave circuits due to its high breakdown voltage,small on-resistance and low capacitance.However,GaN SBD in the microwave and millimeter wave band still has many shortcomings,such as high turn-on voltage and leakage current.Several types of GaN SBD are summarized and analysed,and several methods and techniques to improve the key parameters of diode are discussed.The microwave and millimeter wave rectifier circuits and frequency doubling circuits based on GaN SBD in recent years are listed,and the relationship between the electrical performance and the key parameters of diode is discussed.The future development direction of GaN SBD is prospected.

关 键 词：氮化镓 肖特基二极管 整流器 倍频电路 

分 类 号：TN311.8[电子电信—物理电子学]