亚稳相Ga_(2)O_(3)异质外延的研究进展  

Advances in Heterogeneous Epitaxy of Metastable Ga_(2)O_(3)

作　　者：汪正鹏 叶建东[1] 郝景刚 张贻俊 况悦 巩贺贺 任芳芳[1] 顾书林[1] 张荣[1] WANG Zhengpeng;YE Jiandong;HAO Jinggang;ZHANG Yijun;KUANG Yue;GONG Hehe;REN Fangfang;GU Shulin;ZHANG Rong(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China)

机构地区：[1]南京大学电子科学与工程学院,南京210023

出　　处：《电子与封装》2023年第1期96-108,共13页Electronics & Packaging

基　　金：国家自然科学基金(62234007,U21A20503和U21A2071)。

摘　　要：作为一种新兴的超宽禁带半导体材料,氧化镓(Ga_(2)O_(3))被认为是下一代高功率电力电子器件领域的战略性先进电子材料。相较于热稳定的β-Ga_(2)O_(3),亚稳相Ga_(2)O_(3)表现出更为新颖的物理性质,逐渐受到关注。通过异质外延生长高质量的亚稳相Ga_(2)O_(3)单晶薄膜是实现亚稳相Ga_(2)O_(3)基功率电子、微波射频和深紫外光电信息感知器件的重要前提。重点阐述了亚稳相Ga_(2)O_(3)的晶体结构、电子能带结构以及相关物理性质,总结了近年来亚稳相Ga_(2)O_(3)异质外延和能带工程的研究进展,并对未来亚稳相Ga_(2)O_(3)材料和器件的发展趋势进行了展望。As an emerging ultra-wide bandgap semiconductor material,gallium oxide(Ga_(2)O_(3))is considered to be a strategic advanced electronic material for the next generation high power electronics devices.Compared with the thermally stableβ-Ga_(2)O_(3),the metastable Ga_(2)O_(3)materials have been attracted attention due to novel physical properties.The growth of high-quality metastable Ga_(2)O_(3)single-crystal films by heterogeneous epitaxy is an important prerequisite for the realization of metastable Ga_(2)O_(3)-based power electronics,microwave RF and deep-UV optoelectronic information sensing devices.The crystal structure,electronic energy band structure and related physical properties of metastable Ga_(2)O_(3)are highlighted,the research progress of metastable Ga_(2)O_(3)heteroepitaxy and bandgap engineering of metastable Ga_(2)O_(3)has been reviewed,and the future development trend of metastable Ga_(2)O_(3)materials and devices is anticipated.

关 键 词：超宽禁带半导体 亚稳相Ga_(2)O_(3) 异质外延 能带工程 

分 类 号：TN304[电子电信—物理电子学] O471.4[理学—半导体物理]