基于碳化硅器件微系统封装研究进展  

Research progress of microsystem packaging based on silicon carbide devices

作　　者：田文超[1] 钱莹莹 赵静榕 李昭 李彬[1] TIAN Wenchao;QIAN Yingying;ZHAO Jingrong;LI Zhao;LI Bin(School of Mechanical Electronical and Engineering,Xidian University,Xi’an 710068,China;Shanghai Sharetek Technology Co.,ltd.,Shanghai 201109,China)

机构地区：[1]西安电子科技大学机电工程学院,陕西西安710068 [2]上海轩田工业设备有限公司,上海201109

出　　处：《微电子学与计算机》2023年第1期50-63,共14页Microelectronics & Computer

基　　金：国家自然科学基金项目(51805400);西安电子科技大学教育教学改革研究项目资助(B21011)。

摘　　要：SiC由于其优越的材料性能,受到社会的广泛关注.传统器件的封装形式制约SiC器件优势的充分发挥,为了解决电、热及绝缘方面的问题,近年来出现了许多对碳化硅功率模块的新型封装技术和方案.从SiC器件的模块微系统封装技术出发,对Sic器件的封装材料、模块封装结构、封装工艺和应用进行分类和总结,涵盖了提高耐高温能力、降低高频寄生电感、增强散热能力等一系列相关技术.在此基础上,对Sic器件微系统所面临的科学挑战进行了总结,对相关技术的未来发展进行了展望.SiC has been widely concerned for its superior material properties.The packaging form of traditional devices restricts the full play of the advantages of SiC devices.To address the issue that the electrical,thennal and insulation performance,new packaging technologies and solutions for SiC devices have emerged in recent years.Based on the modular microsystem packaging technology of SiC devices,the packaging materials,module packaging structure,packaging technology and application of SiC devices are classified and summarized,covering a series of related technologies such as improving high-temperature resistance,reducing high-frequency parasitic inductance,and enhancing heat dissipation performance.Then the scientific challenges of silicon carbide devices are summarized.Finally,the future development trend of related technologies is prospected.

关 键 词：碳化硅 封装材料 模块集成 封装技术 微系统 

分 类 号：TN453[电子电信—微电子学与固体电子学]