用于制备具有超光滑表面异质集成4英寸硅基砷化镓薄膜的高效离子剥离技术  

Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

作　　者：孙嘉良 林家杰 金婷婷 池超旦 周民 Robert Kudrawiec 李进 游天桂 欧欣 Jialiang Sun;Jiajie Lin;Tingting Jin;Chaodan Chi;Min Zhou;Robert Kudrawiec;Jin Li;Tiangui You;Xin Ou(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China;Jiaxing Key Laboratory of Plasma and Ion Beam Technology,Jiaxing 314100,China;Department of Semiconductor Materials Engineering,Wroclaw University of Science and Technology,Wroclaw 50-370,Poland;Beijing Semicore ZKX Electronics Equipment Co.,Ltd.,Beijing 100176,China)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Information Science and Engineering,Jiaxing University,Jiaxing 314001,China [4]Jiaxing Key Laboratory of Plasma and Ion Beam Technology,Jiaxing 314100,China [5]Department of Semiconductor Materials Engineering,Wroclaw University of Science and Technology,Wroclaw 50-370,Poland [6]Beijing Semicore ZKX Electronics Equipment Co.,Ltd.,Beijing 100176,China

出　　处：《Science China Materials》2023年第1期211-218,共8页中国科学（材料科学（英文版）

基　　金：supported by the National Key R&D Program of China(2017YFE0131300);the National Natural Science Foundation of China(62174167,61874128);the Frontier Science Key Program of CAS(QYZDY-SSW-JSC032);the Key Research Project of Zhejiang Laboratory(2021MD0AC01);the Program of Shanghai Academic Research Leader(19XD1404600);K.C.Wong Education Foundation(GJTD-2019-11);NCBiR within the Polish-China(WPC/130/NIR-Si/2018)。

摘　　要：在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电集成提供新的材料平台.本文基于对GaAs材料剥离机理的分析阐述,优化了GaAs薄膜转移工艺的离子注入条件.结果表明,相比于He离子单独注入,由于较小的热预算和注入后相对更低的缺陷密度,He/H离子共注入对于GaAs薄膜转移更高效.以Al2O3为键合介质层,通过优化的离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上.探索了包括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺,以将转移后GaAs薄膜的表面质量提高到可以高质量外延的水平.在400℃退火1 h后,转移的GaAs薄膜单晶质量进一步提高,X射线摇摆曲线的半峰全宽仅为89.03 arcsec.Heterogeneous integration of single-crystalline Ga As thin film on a Si substrate provides a promising material platform for Si-based optoelectronic integration.In this work,based on the clarified splitting mechanism of Ga As,the ion implantation conditions for Ga As film transfer were optimized.It was found that the co-implantation of He and H ions is more efficient in exfoliating the Ga As thin film with a lower thermal budget and lower density of defects in comparison with the case of the single He/H ion implantation.With the Al2O3as the bonding intermediate layer,a 4-inch Ga As film was successfully transferred onto the Si(100)substrate via the optimized ion-slicing technique.The surface treatments,including chemical mechanical polishing,ozone oxidation,and KOH cleaning,were explored to improve the surface quality of the as-transferred Ga As thin film to the level of epi-ready.After post-annealing at 400℃ for 1 h,the quality of the transferred Ga As thin film was further improved with only 89.03 arcsec for the full width at half maximum of the X-ray rocking curve.

关 键 词：剥离技术 化学机械抛光 异质集成 缺陷密度 光电集成 GaAs薄膜 离子注入 表面处理工艺 

分 类 号：TB34[一般工业技术—材料科学与工程]