昆明物理研究所大面积水平推舟液相外延碲镉汞薄膜技术进展  

Progress in LPE Growth of HgCdTe at Kunming Institute of Physics

作　　者：孔金丞[1] 宋林伟[1] 起文斌 姜军[1] 丛树仁[1] 刘燕[1] 荣徽宇 许江明 方东 赵鹏[1] 姬荣斌[1] KONG Jincheng;SONG Linwei;QI Wenbin;JIANG Jun;CONG Shuren;LIU Yan;RONG Huiyu;XU Jiangming;FANG Dong;ZHAO Peng;JI Rongbin(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2023年第2期111-122,共12页Infrared Technology

摘　　要：报道了近年来昆明物理研究所在富碲水平推舟液相外延碲镉汞外延薄膜制备技术方面的进展。2019年以来,突破了Ф120 mm碲锌镉晶体定向生长技术,使碲锌镉衬底沉积相和夹杂相密度≤5×103 cm^(-2),位错腐蚀坑密度(EPD)≤4.0×10^(4)cm^(-2),Ф120 mm(111)晶圆衬底的Zn组份分布极差≤0.36%。基于碲锌镉衬底技术的进步,液相外延碲镉汞薄膜的最大生长尺寸达到了70 mm×75 mm,薄膜位错腐蚀坑密度均值为5×10^(4)cm^(-2),X射线双晶回摆曲线半峰宽(DCRC-FWHM)≤35 arcsec,部分可控制到25 arcsec以下;50 mm×60 mm尺寸长波碲镉汞薄膜的厚度极差≤±1.25μm,室温截止波长极差≤±0.1μm,中波碲镉汞薄膜相应指标分别为≤±1μm、≤±0.05μm。材料技术的进展促进了制冷型碲镉汞探测器产能提升和成本的降低,也支撑了高性能长波/甚长波探测器、高工作温度(HOT)探测器以及2048×2048、4096×4096等甚高分辨率高性能探测器的研制。The recent progress in the LPE growth of HgCdTe(MCT)epi-layer at the Kunming Institute of Physics(KIP)is reported.The precipitates and inclusion density of the CdZnTe substrate are less than 5×10^(3) cm^(-2)and the etch pit density(EPD)is less than 4.0×10^(4)cm^(-2).Owing to the oriented growth technology of the CdZnTe single crystal with Ф=120 mm,the variation of the Zn components in the prepared substrate wafers with Ф=120 mm(111)was less than 0.36%.The maximum size of the HgCdTe films grown by LPE was up to 70 mm×75 mm,with an etch pit density(EPD)of 5×10^(4)cm^(-2)and DCRC-FWHM less than 35 arcsec(could be lower than 25 arcsec).Over a substrate area of 50 mm×60 mm,the thickness homogeneity of the LPE MCT epi-layer is better than △d=±1.25mm,and a cut-off wavelength homogeneity better than △λ=±0.1mm is achieved for the LWIR MCT epi-layers;that of the MWIR epi-layers are±1mm and±0.05mm,respectively.Due to the improvement of material technology,which effectively increases the yield of low-cost MCT IRFPAs at KIP,high-performance LW/VLW/HOT IRFPAs and large array detectors such as 2048×2048 and 4096×4096 based on MCT/CZT have been developed.

关 键 词：液相外延 碲锌镉衬底 碲镉汞薄膜 

分 类 号：TN215[电子电信—物理电子学]