图形衬底对多周期InGaAs量子点自组装生长的影响  

Effects of patterned substrates on self-assembly of multi-period InGaAs quantum dots

作　　者：张丹懿 江玉琪 黄泽琛 蒋冲 赵梦秦 王一 郭祥[1,2,3] 丁召 ZHANG Dan-Yi;JIANG Yu-Qi;HUANG Ze-Chen;JIANG Chong;ZHAO Meng-Qin;WANG Yi;GUO Xiang;DING Zhao(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province,Guiyang 550025,China;Power Semiconductor Device Reliability Engineering Center of the Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州大学微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《原子与分子物理学报》2023年第1期67-72,共6页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(61564002,11664005);贵州省科学技术基金(黔科合基础[2020]1Y271);贵州大学培育项目(贵大培育[2019]58号);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07))。

摘　　要：量子点器件技术广泛应用于量子计算和光电器件上.成核位置的均匀性、有序性和尺寸一致性,可以有效提高光电器件性能.为了实现阵列量子点的可控性,本文采用湿法刻蚀制备图形化衬底,理论上解释了铟原子在图形化衬底上成核现象,产生有序的量子点分布特征,发现图形衬底的缺陷诱导在平台边缘和沟壑边缘成核,形成较大的量子点.在Stranski-Krastanow模式下图形衬底制备多周期量子点,发现多周期生长可以弱化台阶结构对量子点分布的限制作用.Quantum dot device technology is widely used in quantum computation and optoelectronic devices.The uniformity,orderliness and dimensional consistency of nucleation positions can effectively improve the performance of optoelectronic devices.In order to achieve controllability of quantum dots array,in this paper,we use the wet etching to prepare a patterned substrate,explain theoretically the nucleation phenomenon of indium atoms on the patterned substrate and hence the ordered quantum dot distribution characteristics,and thus find that defects in the patterned substrate induce nucleation at the platform edge and trench edge to form larger quantum dots.Multi-period quantum dots are prepared on the patterned substrates in Stranski-Krastanow mode,and it is found that multi-periodic growth can weaken the limiting effect of the plateau structure on the quantum dot distribution.

关 键 词：湿法刻蚀 多周期量子点生长 台阶结构 S-K模式 图形衬底 

分 类 号：O472[理学—半导体物理]