In液滴在GaAs(001)表面扩散行为的研究  

Study on the diffusion behavior of In droplets on GaAs surface

作　　者：赵梦秦 黄泽琛 蒋冲 张丹懿 唐锦程 王一 郭祥 丁召[1,2,3] ZHAO Meng-Qin;HUANG Ze-Chen;JIANG Chong;ZHANG Dan-Yi;TANG Jin-Cheng;WANG Yi;GUO Xiang;DING Zhao(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province,Guiyang 550025,China;Power Semiconductor Device Reliability Engineering Center of the Ministry of Education,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]贵州省微纳电子与软件技术重点实验室,贵阳550025 [3]半导体功率器件可靠性教育部工程研究中心,贵阳550025

出　　处：《原子与分子物理学报》2023年第2期65-72,共8页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(61564002,11664005);贵州省科学技术基金(黔科合基础[2020]1Y271);贵州大学培育项目(贵大培育[2019]58号);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07))。

摘　　要：量子点的物理与光电性质主要依赖于其尺寸及密度参数,而量子点的密度、高度等参数又控制着原子在衬底上的成核行为.本文采用液滴外延法在GaAs(001)表面生长金属In液滴,研究了In液滴的扩散运动与衬底温度和沉积速率之间的关系,研究发现,随着衬底温度的升高和沉积速率的降低,In液滴尺寸增大密度却降低.通过得到的实验数据,拟合关于In液滴密度与衬底温度和沉积速率的曲线,分析了量子环的生长机制,并根据原子的表面迁移行为,进一步分析其表面原子扩散机理.The basic physical properties and applications of semiconductor quantum dots have attracted the attention of researchers.The properties of quantum dots mainly depend on the size and density,and the density,height and other parameters of quantum dots control the nucleation of adatoms on the substrate.In this paper,metal In droplets are grown on GaAs(001)surface by droplet epitaxy.The relationships of the diffusion movement of In droplets with substrate temperature and deposition rate are studied.It is found that with the increase of substrate temperature and the decrease of deposition rate,the size of in droplets increases,but the density decreases.Through the experimental data obtained,the curves of In droplet density with substrate temperature and deposition rate are fitted,the growth mechanism of quantum ring is analyzed,and the mechanism of surface atomic diffusion is further analyzed.

关 键 词：量子点 In液滴 衬底温度 沉积速率 量子环 原子的表面迁移 

分 类 号：O472[理学—半导体物理]