考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法  

CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE

作　　者：杜明星[1] 边维国 欧阳紫威 Du Mingxing;Bian Weiguo;Ouyang Ziwei(Tianjin Key Laboratory of Control Theory&Applications in Complicated System,Tianjin University of Technology,Tianjin 300384,China;Department of Electrical Engineering,Technical University of Denmark,Lyngby 2800 Kgs,Denmark)

机构地区：[1]天津市复杂系统控制理论及应用重点实验室(天津理工大学),天津300384 [2]丹麦技术大学电气工程系,灵比2800 Kgs

出　　处：《太阳能学报》2023年第1期16-23,共8页Acta Energiae Solaris Sinica

基　　金：天津市技术创新引导专项基金(20YDTPJC00510)。

摘　　要：针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。Aiming at the crosstalk problem in photovoltaic grid-connected inverter,a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed.The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied.Firstly,the mathematical model of crosstalk voltages in each stage are analyzed,and the differential expressions of crosstalk voltage are derived;Secondly,the prediction algorithm of crosstalk peak is proposed,and the mathematical models of the parameters required to predict the crosstalk peak are established;Finally,an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.

关 键 词：碳化硅 MOSFET 串扰 并网逆变器 寄生电感 半桥电路 

分 类 号：TM46[电气工程—电器]