基于分离位线DICE结构的SRAM存储单元版图抗辐射设计  

Radiation Resistance Design of SRAM Storage Unit Layout Based on DICE Structure of Separated Bit Line

作　　者：陈玉蓉[1] 沈婧[1] 王蕾[1] CHEN Yurong;SHEN Jing;WANG Lei(No.58 Research Institute of CETC,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子产品可靠性与环境试验》2023年第1期49-53,共5页Electronic Product Reliability and Environmental Testing

摘　　要：在SRAM加固设计中,存储单元的版图抗辐射设计起着重要的作用。基于分离位线的双互锁存储单元(DICE)结构,采用0.18μm体硅工艺,根据电路功能、结构和抗辐射性能,设计了一种新的NMOS隔离管的SRAM存储单元版图结构。根据分析结果,SRAM存储单元在确保存储单元功能的前提下,具备抗总剂量效应、抗单粒子翻转和抗单粒子闩锁效应,同时可实现单元面积的最优化。In the design of SRAM reinforcement,the layout anti-radiation design of memory unit plays an important role.According to the circuit function,structure and anti-radiation performance,a new layout structure of SRAM memory unit with NMOS isolation tube is designed based on DICE structure of separation bit line and 0.18μm bulk silicon technology.According to the analysis results,the SRAM can resist the total ionizing dose,single event upset and single event latch effects on the premise of ensuring the function of the memory unit,and can realize the optimization of the unit area.

关 键 词：总剂量效应 单粒子翻转 单粒子闩锁效应 分离位线双互锁存储单元结构 静态随机存储器版图加固 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]