C_(4)F_(6)/SF_(6)混合气体对硅基材料的ICP刻蚀工艺研究  

Operation Parameters of Inductively Coupled C_(4)F_(6)/SF_(6)Plasma Etching Process for Si Substrate Material

作　　者：陈长鸿 王妹芳 孙一军[1] 孙颖[1] 孙家宝 刘艳华[1] 刘志[1] 谢石建 CHEN Changhong;WANG Meifang;SUN Yijun;SUN Ying;SUN Jiabao;LIU Yanhua;LIU Zhi;XIE Shijian(Micro-Nano Fabrication Center,Zhejiang University,Hangzhou 310013,China)

机构地区：[1]浙江大学微纳加工中心校级平台,杭州310013

出　　处：《真空科学与技术学报》2023年第1期36-41,共6页Chinese Journal of Vacuum Science and Technology

摘　　要：为避免深硅刻蚀工艺所引起的扇贝纹效应,同时减少其工艺气体所带来的温室效应,本文将新一代环保电子刻蚀气C4F6引入硅刻蚀工艺,采用刻蚀与钝化同步进行的伪Bosch工艺刻蚀硅槽孔。研究了ICP功率、RIE功率、腔体压强和C_(4)F_(6)/SF_(6)气体流量比对刻蚀速率、光刻胶/硅刻蚀选择比及刻蚀形貌的影响。结果表明,一定程度增加ICP功率和RIE功率可分别提高等离子体密度和物理轰击刻蚀作用;腔体压强对粒子平均自由径有较大影响;而C4F6流量的增加可加强刻蚀侧壁保护机制。通过综合优化工艺参数,获得了2.8μm/min硅刻蚀速率,3.1的光刻胶/硅刻蚀选择比和侧壁平坦,表面光滑,垂直度高的刻蚀形貌。To avoid the scallop effect caused by Bosch etching process and reduce GWPs carried by etching gas,an environmentally friendly electronic etching gas,C4F6,is introduced into the etching process.The Si substrate was etched by using a pseudo-Bosch process with simultaneous etching and passivation.And the effects of ICP power,RIE power,cavity pressure and flow rate of C_(4)F_(6)/SF_(6)on etching rate,photoresist/Si etch selection ratio and etch morphology were investigated.The results show that increasing ICP power and RIE power can improve the plasma density and physical bombardment effect,respectively;the chamber pressure has a large impact on the mean free diameter of particles,and the increase of C4F6 flux could strengthen the sidewall protection mechanism.Under the optimized etching condition,flat sidewalls,smooth surface,and high perpendicularity etching profile with 2.8μm/min silicon etching rate and 3.1 photoresist/Si etching selection ratio can be obtained.

关 键 词：感应耦合等离子体刻蚀 刻蚀速率 深硅刻蚀 选择比 

分 类 号：TN305[电子电信—物理电子学]