InAs/GaSbⅡ类超晶格双色红外焦平面器件的干法刻蚀与湿法腐蚀制备对比研究  

Comparative Study on Dry/Wet Etching Preparation of InAs/GaSb Type-Ⅱ Superlattice Dual-Color Infrared Focal Plane Devices

作　　者：温涛[1] 胡雨农 李景峰 赵成城 王国伟[2] 刘铭[1] WEN Tao;HU Yu-nong;LI Jing-feng;ZHAO Cheng-cheng;WANG Guo-Wei;LIU Ming(North China Research Institute of Electro-Optics,Beijing 100015,China;Institue of Semiconductors,Chinese Academy of Sciences,Beijing 10083,China)

机构地区：[1]华北光电技术研究所,北京100015 [2]中国科学院半导体研究所,北京100083

出　　处：《红外》2023年第4期1-6,共6页Infrared

摘　　要：分别采用干法刻蚀工艺路线和湿法腐蚀工艺路线制备了面阵规模为320×256、像元中心距为30μm的InAs/GaSbⅡ类超晶格长/长波双色红外焦平面器件,并对其台面形貌、接触孔形貌、伏安特性以及互连读出电路并封入杜瓦后的中测性能进行了对比研究。总结了采用干法工艺和湿法工艺制备双色InAs/GaSbⅡ类超晶格焦平面器件的特点。该研究对InAs/GaSbⅡ类超晶格焦平面器件的研制具有参考意义。InAs/GaSb type-Ⅱsuperlattice long-wave/long-wave dual-color infrared focal plane devices with an array size of 320×256 and a pixel pitch of 30μm were prepared by dry/wet etching process,respectively.The mesa profile,contact hole profile,voltage-current characteristics,and mid-test performance after interconnecting the readout circuit and sealing dewar were compared.The characteristics of the fabrication of dual-color InAs/GaSb type-Ⅱ superlattice focal plane devices by dry/wet etching process were summarized.This study has reference significance for the study of InAs/GaSb type-Ⅱ superlattice focal plane devices.

关 键 词：INAS/GASB Ⅱ类超晶格 焦平面 双色 

分 类 号：TN215[电子电信—物理电子学]