一种负反馈式双极结型晶体管工艺实现  

Process Implementation of a Negative Feedback Bipolar Junction Transistor

作　　者：王莉[1] 宋文斌[1] 刘盛意 徐晓萍 刘巾湘 方文远 WANG Li;SONG Wenbin;LIU Shengyi;XU Xiaoping;LIU Jinxiang;FANG Wenyuan(School of Intelligence&Electronic Engineering,Dalian Neusoft University of Information,Dalian 116023,China)

机构地区：[1]大连东软信息学院智能与电子工程学院,大连116023

出　　处：《微处理机》2023年第2期9-12,共4页Microprocessors

基　　金：辽宁省省级教改项目“紧密对接创新产业链的先进半导体产业学院建设的研究与实践”(辽教通[2022]166号)。

摘　　要：利用负反馈电路对放大器提高增益稳定性、减少非线性失真、拓展通频带宽、改善输入输出电阻的作用,基于实际生产,设计并实现一款带电阻双极结型晶体管产品。在普通晶体管基础上,利用LPCVD工艺淀积多晶硅,并对其进行离子注入,充当负反馈偏置电路中的电阻结构。以典型半导体加工工艺先后实现基极、发射极、通孔、多晶硅电阻、电极、保护膜以及集电极的制备,对电路成品进行详细性能测试并投入生产。该产品EDS特性测试良率高达99.4%,放大倍数均为200以上。Using the negative feedback circuit's function on amplifier,such as improving gain stability,reducing nonlinear distortion,expanding passband and improving input and output resistance,based on the actual production,a bipolar junction transistor with resistance is designed and realized.On the basis of ordinary transistor,polysilicon is deposited by LPCVD process and implanted with ions,which acts as a resistance structure in negative feedback bias circuit.The base,emitter,through hole,polysilicon resistor,electrode,protective film and collector are prepared by typical semiconductor processing technology,and the finished circuit is tested in detail and put into production.The yield rate of the product in EDS cha-racteristics test is as high as 99.4%,and the hFE is above 200.

关 键 词：双极结型晶体管 半导体工艺 负反馈晶体管 离子注入 多晶硅电阻 

分 类 号：TN305[电子电信—物理电子学]