总剂量与单粒子协合效应对SRAM单粒子翻转敏感性影响的仿真研究  

Simulation study on the synergistic effect of TID and SEE on SEU sensitivity of SRAM

作　　者：刘艳 曹荣幸 李红霞 赵琳 韩丹 刘洋 郑澍 曾祥华 薛玉雄 LIU Yan;CAO Rongxing;LI Hongxia;ZHAO Lin;HAN Dan;LIU Yang;ZHENG Shu;ZENG Xianghua;XUE Yuxiong(College of Electrical,Energy and Power Engineering,Yangzhou University,Yangzhou 225127,China;Institute of Special Environments Physical Sciences,Harbin Institute of Technology(Shenzhen),Shenzhen 518055,China)

机构地区：[1]扬州大学电气与能源动力工程学院,扬州225127 [2]哈尔滨工业大学(深圳)特殊环境物质科学研究院,深圳518055

出　　处：《航天器环境工程》2023年第2期170-178,共9页Spacecraft Environment Engineering

基　　金：国家自然科学基金项目(编号:12004329);强脉冲辐射环境模拟与效应国家重点实验室专项经费项目(编号:SKLIPR2115);江苏省研究生实践创新计划项目(编号:SJCX22_1704);扬州宽禁带半导体电子材料与器件实验室开放基金项目(编号:YZ202026301,YZ202026306)。

摘　　要：静态随机存储器(SRAM)在空间环境中可能会受到总电离剂量(TID)效应和单粒子效应(SEE)协合作用的影响,导致器件单粒子翻转(SEU)的敏感性发生改变。文章针对90 nm的SRAM器件,通过器件级和电路级的综合仿真手段,利用计算机辅助设计(TCAD)和集成电路模拟程序(SPICE)软件研究TID和SEE的协合作用对SRAM器件SEU敏感性的影响机制。发现:当TID和SEE作用在器件相反工作阶段(即存储相反数据)时,SEU敏感性随着总剂量的增加而增强;当TID和SEE作用在器件相同工作阶段(即存储相同数据)时,SEU敏感性随着总剂量的增加而减弱。其原因主要是SRAM的一个下拉NMOS管受到总剂量辐照发生损伤后,引起电路恢复时间和反馈时间的改变,并且恢复过程和反馈过程对SEU敏感性的贡献程度不同。以上模拟结果可为存储器件的抗辐射加固设计提供参考。Static random access memory(SRAM)may be subjected to the synergistic effect of total ionizing dose(TID)effect and single event effect(SEE)in space,resulting in the sensitivity change of single event upset(SEU)in the device.In this paper,the influencing mechanism of synergistic effect of TID and SEE on sensitivity of SEU in 90 nm SRAM was studied through integrated simulation at device level and circuit level by using technology computer aided design(TCAD)and simulation program with integrated circuit emphasis(SPICE).It was found that the SEU sensitivity increased with the increase of total dose when TID and SEE acted on the device at opposite working status,i.e.,when the opposite data was stored.Whereas,the SEU sensitivity decreased with the increase of total dose when TID and SEE acted on the device at the same working status,i.e.,when the same data was stored.The main reason was that after the damage of one of the pull-down NMOSes in SRAM by total dose radiation,the circuit recovery time and feedback time changed,and the recovery process and feedback process had different contributions to SEU sensitivity.This work may provide some reference for the radiation resistance design of memory devices.

关 键 词：静态随机存储器 总电离剂量 单粒子效应 单粒子翻转 协合效应 仿真研究 

分 类 号：V416.5[航空宇航科学与技术—航空宇航推进理论与工程] TP391.9[自动化与计算机技术—计算机应用技术]