不同溅射气压下TiN薄膜的制备及其性能  

Preparation and properties of TiN films under different sputtering pressure

作　　者：徐洁 高淼 王继允 张旭东 卢琳琳 XU Jie;GAO Miao;WANG Jiyun;ZHANG Xudong;LU Linlin(School of Materials Science and Engineering,Xi’an Polytechnic University,Xi’an 710048,China)

机构地区：[1]西安工程大学材料工程学院,陕西西安710048

出　　处：《西安工程大学学报》2023年第2期25-31,共7页Journal of Xi’an Polytechnic University

基　　金：陕西省自然科学基础研究-面上项目(2023-JC-YB-476,2023-JC-YB-471)。

摘　　要：为研究TiN薄膜的性能尤其是红外发射性能,选用Ti靶为溅射靶材,氮气为反应气体,以石英玻璃为基底,在不同溅射气压下(0.1 Pa、0.3 Pa、0.5 Pa、0.7 Pa)采用反应直流磁控溅射技术制备了TiN薄膜,并对其红外发射性能、导电性能、耐腐蚀性能等进行了分析。结果表明:所制备的TiN(200)衍射峰都往大角度方向发生偏移,这跟薄膜的N与Ti之比有关。不同的溅射气压使得Ti原子与N原子的结合程度不同,所制备的TiN薄膜是非化学计量比化合物。当溅射气压为0.1 Pa时,溅射颗粒与气体分子的撞击次数少,粒子沉积到基底上仍具有足够的能量扩散、迁移,进行均匀有序的晶格排列,薄膜的结晶质量较高,晶粒尺寸最大,电阻率最低。随着溅射压力的增大,溅射颗粒与气体分子的撞击次数变多,能量损耗较大,颗粒沉积到基质中就不能充分地迁移和生长,从而导致电阻率上升。在低溅射气压下,TiN薄膜表面粗糙度小,具有较低的红外发射率和良好的耐腐蚀性能。In order to study the properties of TiN films,especially the infrared emission properties,TiN films were prepared by reactive DC magnetron sputtering under different sputtering pressures(0.1 Pa,0.3 Pa,0.5 Pa,0.7 Pa)using Ti target as sputtering target,nitrogen as reaction gas and quartz glass as substrate.The infrared emission properties,electrical conductivity and corrosion resistance of TiN films were analyzed.Results showed that the prepared TiN(200)diffraction peaks were all shifted in the large-angle direction,which were related to the N/Ti ratio of the films.Different sputtering air pressures caused different binding of Ti atoms to N atoms,and the prepared TiN films were non-chemometric ratio compounds.When the sputtering air pressure was 0.1 Pa,the sputtered particles had less impacts with gas molecules.The particles deposited into the substrate still had enough energy to diffuse and migrate.A uniform and orderly lattice arrangement was carried out.Films had higher crystalline quality and lowest resistivity.As the sputtering pressure increased,the number of impacts between sputtered particles and gas molecules became more,the energy loss was larger.The particles deposited into the substrate would not be able to migrate and grow sufficiently,which led to a rise in resistivity.Under low sputtering pressure,the TiN film had low surface roughness,low IR emissivity and good corrosion resistance.

关 键 词：TIN薄膜 磁控溅射 溅射气压 红外发射率 

分 类 号：TG178[金属学及工艺—金属表面处理]