Au掺杂碲镉汞长波探测器技术研究  

Research of Au-doped LWIR HgCdTe detector

作　　者：宋林伟[1] 孔金丞[1] 赵鹏[1] 姜军[1] 李雄军[1] 方东 杨超伟[1] 舒畅[1] Song Linwei;Kong Jincheng;Zhao Peng;Jiang Jun;Li Xiongjun;Fang Dong;Yang Chaowei;Shu Chang(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外与激光工程》2023年第4期1-8,共8页Infrared and Laser Engineering

摘　　要：昆明物理研究所多年来持续开展了对Au掺杂碲镉汞材料、器件结构设计、可重复的工艺开发等研究,突破了Au掺杂碲镉汞材料电学可控掺杂、器件暗电流控制等关键技术,将n-on-p型碲镉汞长波器件品质因子(R_(0)A)从31.3Ω·cm^(2)提升到了363Ω·cm^(2)(λ_(cutoff)=10.5μm@80 K),器件暗电流较本征汞空位n-on-p型器件降低了一个数量级以上。研制的非本征Au掺杂长波探测器经历了超过7年的时间贮存,性能无明显变化,显示了良好的长期稳定性。基于Au掺杂碲镉汞探测器技术,昆明物理研究所实现了256×256(30μm pitch)、640×512(25μm pitch)、640×512(15μm pitch)、1024×768(10μm pitch)等规格的长波探测器研制和批量能力,实现了非本征Au掺杂长波碲镉汞器件系列化发展。Significance Due to the high quantum efficiency and ultra-wide infrared wavelengths(from SWIR to VLWIR),Mercury cadmium telluride(Hg_(1−x)Cd_(x)Te,MCT)is regarded as the preferred material for high-performance infrared focal plane arrays(FPAs).Compared with p-on-n,n-on-p FPAs have the advantages of simple and reliable manufacturing process.However,in n-on-p FPAs,P-type material with intrinsic mercury vacancy is generally used as the absorption layer.The mercury vacancy belongs to the deep-level defect,which leads to the low carrier lifetime of the absorption layer and the difficulty in controlling the dark current of the device at a low level.Replacing Hg-vacancy with Au(gold)in P-type materials is meaningful to increase minority carrier lifetime,and reduce dark current,which is the most effective way to improve the overall performance of MCT LWIR n-on-p devices.In Kunming Institute of Physics(KIP),the Au-doped MCT devices have been investigated since 2010.After years of continuous research,the key technologies including Au-doped material growth,electrical parameters control,device manufacturing and so on have been successfully broken through,which promoted the fabrication of the high-performance Au-doped n-on-p devices.In this paper,the progress of extrinsic Au-doped MCT LWIR n-on-p technologies in Kunming Institute of Physics was reported comprehensively,which was expected to pave a way for mass production of high-performance LWIR n-on-p FPAs.Progress In Kunming Institute of Physics,Te-rich liquid phase epitaxy technology was used to prepare Au-doped LW material.The mercury vacancy concentration was tuned through the heat treatment process with mercury saturation,so as to achieve effective control of electrical parameters.Through the optimization of heat treatment process,the preparation of high-quality Au-doped MCT LW materials was realized,and the carrier concentration can be controlled within 1.0-4.0×10^(16)cm^(−3).The dark current is a significant parameter that determines the performance of device.The

关 键 词：Au掺杂 暗电流 长波红外 碲镉汞(HgCdTe) 焦平面 

分 类 号：TN215[电子电信—物理电子学]