有源层厚度对MGZO光电晶体管性能的影响  

Effect of active layer thickness on the performance of MGZO phototransistor

作　　者：孙玉轩 高晓红[1] 王森 王晗 张悦[1] SUN Yu-xuan;GAO Xiao-hong;WANG Sen;WANG Han;ZHANG Yue(School of electrical and computer science,Jilin Jianzhu university,Changchun 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院,吉林长春130118

出　　处：《吉林建筑大学学报》2023年第2期77-83,共7页Journal of Jilin Jianzhu University

基　　金：吉林省科技厅科技发展计划项目(20190303114SF);吉林省教育厅“十三五”科学技术项目(JJKH20200276KJ).

摘　　要：室温情况下使用射频磁控溅射设备在100 nm的P型单抛热氧化SiO_(2)上生长镁镓掺杂氧化锌(MGZO)薄膜,并制备成光电晶体管器件.分析MGZO薄膜生长过程中不同有源层厚度对薄膜及器件的影响.使用原子力显微镜(AFM)和扫描电子显微镜(SEM)观察薄膜厚度、表面形貌分析薄膜质量,通过紫外-可见分光光度计(UV-Vis)表征样品的可见光透过率分析其光学特性,使用X射线衍射仪(XRD)分析MGZO薄膜组分.实验结果表明,不同有源层厚度的MGZO薄膜在可见光区域的平均透过率均在95%以上.当有源层厚度为40 nm时MGZO器件的电学性能整体达到最佳,迁移率为8.67 cm^(2)·V^(-1)s^(-1),阈值电压为1.0 V,亚阈值摆幅为0.926 V·dec^(-1),开关电流比达到5.28×10^(7).Magnesium gallium doped zinc oxide(MGZO)thin films were grown on 100 nm p-type single throw thermal oxide SiO_(2) by RF magnetron sputtering at room temperature,and phototransistor devices were prepared.The effects of different active layer thicknesses on MGZO films and devices were studied.atomic force microscope(AFM)and scanning electron microscope(SEM)were used to observe the film thickness and surface morphology,analyze the film quality,characterize the visible light transmittance of the sample by UV-Vis,analyze its optical properties,and analyze the components of MGZO film by X-ray Diffractometer(XRD).The experimental results show that the average transmittance of MGZO films with different active layer thickness in the visible region is more than 95%.When the active layer thickness is 40 nm,the overall electrical performance of MGZO device reaches the best,with mobility of 8.67 cm^(2)·V^(-1) s^(-1),threshold voltage of 1.0 V,subthreshold swing of 0.926 V·dec^(-1) and switching current ratio of 5.28×10^(7).

关 键 词：MGZO 光电晶体管 磁控溅射 有源层厚度 

分 类 号：TB383[一般工业技术—材料科学与工程]