PMOS负偏压温度不稳定性的改善研究  

Study on the Improvement of Negative Bias Temperature Instability in PMOS

作　　者：李冰寒 于涛易 华晓春 LI Binghan;YU Taoyi;HUA Xiaochun(Shanghai Huahong Grace Semiconductor Manufacturing Co.,Ltd.,Shanghai 201203,China;Huahong Semiconductor(Wuxi)Co.,Ltd.,Jiangsu 214000,China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203 [2]华虹半导体(无锡)有限公司,江苏214000

出　　处：《集成电路应用》2023年第4期48-51,共4页Application of IC

摘　　要：阐述MOS器件的尺寸逐渐缩小,器件可靠性问题日益突出,特别是PMOS负偏压温度不稳定性(NBTI),逐渐成为影响器件可靠性的关键问题之一。探讨PMOS NBTI效应,设计一系列实验。结果表明,在PMOS源漏结形成过程中,增加F离子注入,以及引入拉应力的氮化硅刻蚀阻挡层,可以有效改善PMOS NBTI寿命。This paper describes the gradual reduction of MOS device size and the increasingly prominent issue of device reliability,especially the negative bias temperature instability(NBTI)of PMOS,which has gradually become one of the key issues affecting device reliability.Explore the PMOS NBTI effect and design a series of experiments.The results indicate that increasing F ion implantation and introducing tensile stress in the silicon nitride etching barrier layer during the formation of PMOS source drain junctions can effectively improve the lifespan of PMOS NBTI.

关 键 词：集成电路制造 PMOS 负偏压温度不稳定性 工艺优化 

分 类 号：TN405[电子电信—微电子学与固体电子学]