GaAs及GaN微波毫米波多功能集成电路芯片综述  

Review of GaAs and GaN Microwave and Millimeter-wave Multifunctional MMICs

作　　者：彭龙新[1,2] 邹文静 孔令峥[1] 张占龙 PENG Longxin;ZOU Wenjing;KONG Lingzheng;ZHANG Zhanlong(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Hangzhou Zhishan Microelectronics Technology Co.,Ltd,Hangzhou,310000,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]杭州致善微电子科技有限公司,杭州310000

出　　处：《固体电子学研究与进展》2023年第2期121-135,共15页Research & Progress of SSE

摘　　要：综合论述了GaAs和GaN微波毫米波的收发多功能芯片、幅相多功能芯片和GaAs限幅放大器集成芯片的发展状况、电路结构和性能特性,简述了收发多功能中的功率放大器和低噪声放大器的设计方法、幅相多功能中数字移相器和衰减器的设计方法,给出了限幅低噪声放大器中限幅器的设计参考。The developments,circuit topologies and performances of GaAs and GaN microwave/millimeter wave T/R multifunctional chips,amplitude-phase multifunctional chips and GaAs limiter-LNA chips were described briefly.The design methodologies of power amplifier,low noise amplifier,digital phase shifter and attenuator have been given respectively in transmitting/receiving branch and in amplitude-phase multifunctional MMIC,while the literatures are also listed for that of limiter-LNA.

关 键 词：砷化镓赝配高电子迁移率晶体管 氮化镓高电子迁移率晶体管 微波单片集成电路 多功能芯片 低噪声放大器 功率放大器 数控衰减器 数控移相器 开关 GaAs数字电路 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.3TN722.72