GaN HEMTs微波器件的失效机理及宇航应用保障  

Failure Mechanisms of GaN HEMTs for Microwave Application and Quality Assurance of Space Application

作　　者：林罡[1,2] LING Gang(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期136-146,共11页Research & Progress of SSE

摘　　要：经过30年的发展,GaN已成为当今化合物半导体领域的研究和产业化的热点,同时也是卫星微波通讯的未来重点发展技术之一,但其可靠性一直是制约GaN HEMT器件工程化的重要因素。本文回顾和总结了南京电子器件研究所解决GaN HEMT微波器件的可靠性问题的研发历程,整理了GaN HEMT微波器件在各阶段的典型失效模式、失效机理。针对GaN微波器件的宇航应用,描述了与相关技术配套的宇航应用保障体系,以实现其良好的运行及未知风险的控制。After 30 years of development,GaN has become a hot topic in the field of compound semiconductor research and industrialization.It is also one of the key technologies for satellite microwave communication in the future.However,the reliability has always been an important factor restricting the engineering of GaN HEMTs.The research and development process of the Nanjing Electronic Devices Institute to solve the reliability problem of GaN HEMT microwave devices have been reviewed and summarized.The typical failure modes and failure mechanisms of GaN HEMT microwave devices in different stages have been summarized.The aerospace application support system for GaN microwave devices is described to realize its good operation and unknown riskcontrol.

关 键 词：氮化镓 SiC衬底GaN器件 微波功率器件 可靠性 失效机理 高温加速寿命试验(HTOL) 总剂量效应 单粒子效应 低气压放电 宇航应用保障 

分 类 号：TN386[电子电信—物理电子学]