高迁移率AlN/GaN/AlN双异质结材料生长及特性研究  

Study on the Growth and Properties of High Mobility AlN/GaN/AlN Double Heterostructures

作　　者：罗伟科[1,2] 李忠辉 李传皓[1,2] 杨乾坤 李亮[1,2] 董逊 彭大青[1,2] 张东国 LUO Weike;LI Zhonghui;LI Chuanhao;YANGQiankun;LI Liang;DONG Xun;PENG Daqing;ZHANG Dongguo(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期191-196,共6页Research & Progress of SSE

基　　金：重点实验室基金资助项目(614280303012002);江苏省重点研发计划资助项目(SBE2020020137)。

摘　　要：采用金属有机物化学气相沉积(MOCVD)制备了高迁移率AlN/GaN/AlN双异质结材料,实验发现生长温度是影响异质结材料性能的关键,降低生长温度可以减少表面裂纹密度,同时减少界面AlGaN合金形成,提升二维电子气(2DEG)浓度。在1000℃采用脉冲法生长AlN势垒,既能提升Al原子在生长表面的横向迁移,又能减少GaN沟道层中Ga原子的纵向扩散;另外,还可以降低AlGaN合金对二维电子气的散射作用,改善异质结的界面陡峭度和表面质量,提升AlN/GaN/AlN双异质结二维输运特性。通过优化脉冲时间、脉冲周期等条件,制备出了室温下方块电阻仅为245Ω/sq,2DEG迁移率约1190 cm^(2)/(V·s),2DEG浓度达2.4×10^(13)cm-2的AlN/GaN/AlN双异质结材料。High mobility AlN/GaN/AlN double heterostructures materials had grown by metalorganic chemical vapor deposition(MOCVD).It is found that the growth temperature is the key factor affecting the properties of heterostructures.AlGaN alloy at the interface can be reduced,and concentration of two-dimensional electron gas(2DEG)can be increased at lower growth temperature.When AlN barriers grow at 1000℃ with pulse method,the lateral migration of Al atoms on the growth surface can be improved,and the longitudinal diffusion of Ga atoms in GaN channel layer can be reduced.Moreover,it can reduce the scattering effect of AlGaN alloy on 2DEG,improve the interface steepness and surface quality of the epilayers,and enhance the two-dimensional transport characteristics of AlN/GaN/AlN heterostructures.Finally,high quality AlN/GaN/AlN double heterostructures have obtained by optimizing the growth conditions,where the sheet resistance is only 245 Q/sq,2DEG mobility is about 1190 cm^(2)/(V·s),and 2DEG concentration is 2.4×10^(13)cm^(-2)at room temperature.

关 键 词：脉冲沉积 双异质结 二维电子气 迁移率 

分 类 号：TN304.2[电子电信—物理电子学]