高成品率和平整度的GaN基Micro LED芯片激光剥离工艺的研究  

Laser Lift-Off Process of GaN-Based Micro LED Chip with High Yield and Flatness

作　　者：岳龙 徐俞[2,3] 王建峰 徐科[2,3,4] YUE Long;XU Yu;WANG Jianfeng;XU Ke(Nano Science and Technology Institute,University of Science and Technology of China,Suzhou 215123,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy Sciences,Suzhou 215123,China;Suzhou Nanowin Science and Technology Company,Suzhou 215000,China;Shenyang National Laboratory for Materials Science,Shenyang 110010,China)

机构地区：[1]中国科学技术大学纳米科学技术学院,苏州215123 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123 [3]苏州纳维科技有限公司,苏州215000 [4]沈阳材料科学国家研究中心,沈阳110010

出　　处：《人工晶体学报》2023年第5期805-811,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金面上项目(62174173)。

摘　　要：使用波长248 nm的准分子激光器实现了GaN基微型发光二极管(Micro LED)的大面积激光剥离(LLO)。分离器件所需要的临界激光能量密度为800~835 mJ·cm^(-2),分离的器件完好无损,分离表面光滑,残余应力为0.0714 GPa,均方根粗糙度仅为0.597 nm,远低于目前报道的LLO方法分离表面。该研究为实现高质量、高效率的GaN基Micro LED芯片的制备提供了一种有前景的思路,对柔性GaN基器件的制备具有一定意义。In this study,a large area laser lift-off(LLO)of GaN-based micro light-emitting diodes(Micro LED)was achieved using an excimer laser at 248 nm.The critical laser energy density required for separation of devices is 800~835 mJ·cm^(-2).The separated device is intact with a residual stress of 0.0714 GPa and a mean square roughness of 0.597 nm,which is much lower than that of the LLO method reported so far.This study provides a promising idea for the fabrication of GaN-based Micro LED chips with high quality and high efficiency,which is of great significance for the fabrication of flexible GaN-based devices.

关 键 词：GAN 微型发光二极管 激光剥离 准分子激光器 成品率 平整度 

分 类 号：TN364[电子电信—物理电子学]