机构地区:[1]College of Optoelectronics,Key Laboratory of Interface Science and Engineering in Advanced Materials,Key Laboratory of Advanced Transducers and Intlligent Control System of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China [2]Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030032,China [3]College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [4]Department of Physics,Research Centre of Excellence for Organic Electronics,Institute of Advanced Materials,Hong Kong Baptist University,Hong Kong,China Department of Microsystems,University of South-Eastern Norway,Horten 3184,Norway [5]College of Chemistry and Chemical Engineering,Central South University,Changsha 410083,China
出 处:《Science Bulletin》2023年第9期928-937,M0004,共11页科学通报(英文版)
基 金:supported by the National Natural Science Foundation of China (U21A20496,61922060,62205235,62204157,61805172,12104334,62174117,and 61905173);the Graduate Innovation Project of Shanxi Province (2020BY117);the Key Research and Development (International Cooperation)Program of Shanxi Province (201803D421044);the Natural Science Foundation of Shanxi Province (20210302123154 and 20210302123169);Research Project Supported by Shanxi Scholarship Council of China (2021-033);Research Project Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2021SX-FR008 and 2022SX-TD020);Introduction of Talents Special Project of Lvliang City (Rc2020206,Rc2020207);Transformation Cultivation Project of University Scientific and Technological Achievements of Shanxi Province (2020CG013);the Key Research and Development Program of Shanxi Province (202102150101007);the support from the Research Grants Council,University Grants Committee,Hong Kong,General Research Fund (12303920);SZ-HK-Macao Science and Technology Plan Project (SGDX2020110309540000);Guangdong Basic and Applied Basic Research Fund (2022A1515010020)。
摘 要:外量子效率远大于100%、低成本、溶液法制备的倍增型有机光电探测器(PM-OPDs)引起广泛关注.但该类器件因阳极欧姆接触带来暗电流的恶化,使其弱光探测并不理想.基于此,本文提出了原子级化学反应改善PM-OPDs暗电流及弱光探测策略,进而带来器件综合性能的显著提升.具体地,本文利用原子层沉积技术在空穴传输层PEDOT:PSS与活性层P3HT:PC71BM(100:1)之间引入0.8 nm厚的Al_(2)O_(3)界面层,通过对薄膜拉曼、XPS及FT-IR性能进行表征,发现原子级厚度的Al_(2)O_(3)可与PEDOT:PSS的化学基团发生反应,调节PEDOT:PSS的功函数,进而在阳极一侧形成肖特基接触.通过与阴极肖特基接触协同,器件在保持高倍增行为的同时,暗电流显著降低.最终,器件的弱光探测性能有所改善,相比于标准器件(可探测64 nW/cm^(2)弱光),Al_(2)O_(3)修饰器件可探测低至2.5 nW/cm^(2)的弱光,且相应的外量子效率和响应率分别达到4.31×10^(8)%,1.85×10^(6)A/W,达到目前报道PM-OPDs的最优值.此策略在新型柔性电子产品及医学成像领域具有很好的应用前景.Low-cost,solution-processed photomultiplication organic photodetectors(PM-OPDs)with external quantum efficiency(EQE)above unity have attracted enormous attention.However,their weak-light detection is unpleasant because the anode Ohmic contact causes exacerbation in dark current.Here,we introduce atomic-level chemical reaction in PM-OPDs which can simultaneously suppress dark current and increase EQE via depositing a 0.8 nm thick Al_(2)O_(3) by the atomic layer deposition.Suppression in dark current mainly originates from the built-in anode Schottky junction as a result of work function decrease of hole-transporting layer of which the chemical groups can react chemically with the bottom surface of Al_(2)O_(3) layer at the atomic-level.Such strategy of suppressing dark current is not adverse to charge injection under illumination;instead,responsivity enhancement is realized because charge injection can shift from cathode to anode,of which the neighborhood possesses increased photogenerated carriers.Consequently,weak-light detection limit of the forwardly-biased PM-OPD with Al_(2)O_(3) treatment reaches a remarkable level of 2.5 nW cm^(-2),while that of the reversely-biased control is 25 times inferior.Meanwhile,the PM-OPD yields a record high EQE and responsivity of 4.31×10^(8)%and 1.85×10^(6)A W^(-1),respectively,outperforming all other polymer-based PM-OPDs.
关 键 词:外量子效率 肖特基接触 弱光探测 原子级 暗电流 柔性电子 欧姆接触 空穴传输层
分 类 号:TN15[电子电信—物理电子学]
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