氧化镓异质集成和异质结功率晶体管研究进展  

Progress of gallium oxide heterogeneous and heterojunction power transistors

作　　者：韩根全[1,5] 王轶博 徐文慧 巩贺贺 游天桂 郝景刚[2] 欧欣 叶建东[4] 张荣[4] 郝跃[1] Genquan Han;Yibo Wang;Wenhui Xu;Hehe Gong;Tiangui You;Jinggang Hao;Xin Ou;Jiandong Ye;Rong Zhang;Yue Hao(School of Microelectronics,Xidian University,Xi’an 710071,China;Platform for Characterization&Test,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences,Suzhou 215123,China;The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China;Shenyang National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]中国科学院苏州纳米技术与纳米仿生研究所测试分析平台,苏州215123 [3]中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 [4]南京大学电子科学与工程学院,南京210023 [5]江苏第三代半导体研究院,沈阳材料科学国家研究中心,苏州215123

出　　处：《科学通报》2023年第14期1741-1752,共12页Chinese Science Bulletin

基　　金：国家自然科学基金(62293520,62293521,62293522,62204255,62234007)资助。

摘　　要：超宽禁带氧化镓(Ga_(2)O_(3))半导体具有临界击穿场强高和可实现大尺寸单晶衬底等优势,在功率电子和微波射频器件方面具有重要的研究价值和广阔的应用前景.尽管Ga_(2)O_(3)材料与器件研究已取得很大进展,但其极低的热导系数和缺少有效的p型掺杂方法成为限制其复杂器件结构制备和器件性能提升的主要瓶颈.针对上述两大关键瓶颈,本文综述了利用异质材料集成的方法实现高导热衬底Ga_(2)O_(3)异质集成晶体管与基于p型氧化镍/n型氧化镓(p-NiO/n-Ga_(2)O_(3))异质结的Ga_(2)O_(3)功率二极管和超结晶体管的研究进展.采用离子刀智能剥离-键合技术实现的高导热衬底Ga_(2)O_(3)异质集成方案可有效解决其导热问题,碳化硅(SiC)和硅(Si)基Ga_(2)O_(3)异质集成晶体管展现出远优于Ga_(2)O_(3)体材料器件的热相关特性.采用异质外延技术制备的p-NiO/n-Ga_(2)O_(3)功率二极管和超结晶体管均展现出良好的电学特性,p-NiO/n-Ga_(2)O_(3)异质结为Ga_(2)O_(3)双极器件的发展提供了一种可行途径.异质集成和异质结技术可有效地克服Ga_(2)O_(3)本身的关键难点问题,助力高效能、高功率和商业可扩展的Ga_(2)O_(3)微电子系统的实现,推动其实用化进程.Ultra-wide band gap gallium oxide(Ga_(2)O_(3))semiconductor has important research value and broad potential applications in power and radio frequency(RF)electronic devices,due to its large bandgap,high critical breakdown field strength,and large size single crystal substrate.Although great progress has been obtained in its materials and devices,such as the commercial 2-inch and 4-inch single crystal and epitaxial substrates,the extremely low thermal conductivity and the lack of effective p-type doping techniques are the crucial bottlenecks limiting the complex device structures and improved performance.The recent progress of heterogeneous Ga_(2)O_(3)transistors on high thermal conductivity substrates and superjunction transistors based on p-NiO/n-Ga_(2)O_(3)heterojunctions are reviewed.The thermal limitation of Ga_(2)O_(3)electronics can be effectively overcome by the heterogeneous integration ofβ-Ga_(2)O_(3)electronics onto the highκsubstrates,such as Si,SiC,and so on.Transient thermoreflectance measurements present an effectively improved thermal boundary resistance of the fabricatedβ-Ga_(2)O_(3)/SiC heterostructure by the ion-cutting process compared with that of theβ-Ga_(2)O_(3)bulk wafer.Heterogeneous Ga_(2)O_(3)transistors on SiC and Si substrates exhibited superior temperature-dependent performance to the devices on the Ga_(2)O_(3)bulk substrate.As the ambient temperature increases from 25 to 250°C,heterogeneousβ-Ga_(2)O_(3)metal-oxide-semiconductor field effect transistors(MOSFETs)on Si substrates have a more stable ION as compared to the devices on a semi-insulatingβ-Ga_(2)O_(3)substrate and IOFF of the devices increases by one order of magnitude in the same ambient temperature range due to the eliminated substrate leakage,which is superior to the bulk devices(5–6 orders of magnitude).Heterogeneousβ-Ga_(2)O_(3)MOSFETs on SiC substrates exhibit a more satisfactory onresistance with an elevated temperature than that of the Ga_(2)O_(3)Schottky barrier diodes and MOSFETs on the bulk wafers.The rec

关 键 词：氧化镓 晶体管 异质集成 氧化镍 异质结 超结 

分 类 号：TN32[电子电信—物理电子学]