GaN基材料的低温外延技术  

Low temperature epitaxial technology for GaN-based materials

作　　者：余佳东 罗毅[1] 汪莱[1] 王健[1] 郝智彪[1] 孙长征[1] 韩彦军[1] 熊兵[1] 李洪涛[1] Jiadong Yu;Yi Luo;Lai Wang;Jian Wang;Zhibiao Hao;Changzheng Sun;Yanjun Han;Bing Xiong;Hongtao Li(Department of Electronic Engineering,Tsinghua University,Beijing National Research Center for Information Science and Technology,Beijing 100084,China)

机构地区：[1]北京信息科学与技术国家研究中心,清华大学电子工程系,北京100084

出　　处：《科学通报》2023年第14期1762-1776,共15页Chinese Science Bulletin

基　　金：国家重点研发计划(2017YFA0205800);国家自然科学基金(61904093,62150027,61974080,61822404,61975093,61991443,61927811,61875104)资助。

摘　　要：GaN基半导体材料的禁带宽度覆盖了整个可见光波段,且其具有优良的物理化学特性,因而被广泛应用于光电子器件、电力电子器件及射频微波器件的制备.传统的GaN基材料通常是利用金属有机物化学气相沉积、分子束外延或氢化物气相外延等在蓝宝石、硅或碳化硅等耐高温的单晶衬底上外延生长得到.这些外延生长技术通常采用高温来裂解参与反应的前驱体.随着信息化和智能化的变革不断深入,催生出了对核心光(电)子器件的低成本和柔性化等共性需求.廉价且易于大面积制备的非晶衬底(玻璃、塑料、金属、聚对苯二甲酸乙二醇酯(polyethylene terephthalate,PET)、聚二甲基硅氧烷(polydimethylsiloxane,PDMS)等)是较为理想的选择,但非晶衬底的一个显著缺点是不能耐受较高的生长温度.由此催生出了GaN基材料低温外延的需求,即需要一类在低温下可以利用外电场能量裂解反应前驱体的外延设备.到目前为止,人们基于物理气相沉积和化学气相沉积的基本原理已经开发出了多种低温外延技术,取得了初步的研究结果.本文分别对这两类低温外延技术进行详细介绍,包括设备结构、工作条件和相关的外延生长结果,总结各类技术的特点.最后,对低温外延技术的发展前景作了展望,指出未来研究需要关注的重点.The band gap of GaN-based semiconductor materials covers the entire visible light band and has excellent physical and chemical properties,which makes it widely used in the fabrication of optoelectronic devices,power electronic devices,and radio frequency and microwave devices.Traditional GaN-based materials are usually epitaxially grown on hightemperature-resistant single-crystalline substrates such as sapphire,silicon,or silicon carbide using metal-organic chemical vapor deposition(MOCVD),molecular beam epitaxy(MBE),or hydride vapor phase epitaxy(HVPE).These epitaxial techniques usually use high temperature to crack the precursors involved in the reaction.With the deepening of informatization and intelligentization,the common demands for low-cost and flexibility of opto(electronic)devices have emerged.On one hand,the display technology is a key link to realize information exchange and intelligence.Moving towards an intelligent society requires further reduction of the display cost per unit area.At the same time,the wearable and portable flexible display technology also has broad application prospects.In addition,solid-state lighting has gradually penetrated into every corner of human life with the improvement of device performance.The application scenarios are rich and colorful.Judging from this,low-cost surface light sources will be a strong competitor for the next generation of lighting technology routes.On the other hand,reducing the fabrication cost of electronic devices per unit area also needs more attention in the future.For example,flexible electronic skin has broad and huge application prospects in artificial limbs,robotics,medical detection and diagnosis,etc.,which has also spawned the demand for low-cost flexible sensors.It can be seen that the common requirements of the above applications for core components are low cost and flexibility,which is also one of the main development directions of the next generation of(opto)electronic devices.Amorphous substrates(such as glass,plastic,metal,polyethylene t

关 键 词：GAN基材料 低温外延 外场耦合裂解 物理气相沉积 化学气相沉积 

分 类 号：TN304[电子电信—物理电子学]