光电晶体管反向击穿特性研究  

Study of Reverse Breakdown Characteristics of Phototransistors

作　　者：陈慧蓉 孔德成 张明 彭时秋 CHEN Huirong;KONG Decheng;ZHANG Ming;PENG Shiqiu(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《电子与封装》2023年第6期76-79,共4页Electronics & Packaging

摘　　要：由于特殊的应用场景,光电晶体管与普通晶体管在性能参数和结构设计上存在较大差异,在器件设计时需要兼顾各项参数的影响。通过理论及仿真计算结合实验流片,归纳出工艺过程中影响NPN光电晶体管反向击穿的几种因素,包括掺杂浓度、结深以及放大倍数等,进而提出了可以提升光电晶体管耐压的工艺改进措施,实现了发射极反向击穿电压提高约20%,集电极-发射极反向击穿电压超过400 V。Phototransistors are extremely different from ordinary transistors in performance parameters and structural designs due to their special application scenarios,and the influence of each parameter should be taken into account during device design.Through theoretical and simulation calculations combined with experimental tape-out,several factors affecting the reverse breakdown voltage of NPN phototransistors are summarized,including doping concentration,junction depth,and amplification,etc.Process improvement methods are then proposed to enhance the withstand voltage of phototransistors,achieving an increase in emitter-base reverse breakdown voltage of approximately 20%and a collector-emitter reverse breakdown voltage of 400 V or more.

关 键 词：光电晶体管 反向击穿 掺杂浓度 放大倍数 

分 类 号：TN305[电子电信—物理电子学]