辐射加固LDMOS器件的总剂量辐射效应  

Total Dose Radiation Effects of Radiation-Hardened LDMOS Devices

作　　者：谢儒彬[1,2] 葛超洋 周锌 曹利超[1] 陈浪涛 吴建伟 乔明 XIE Rubin;GE Chaoyang;ZHOU Xin;CAO Lichao;CHEN Langtao;WU Jianwei;QIAO Ming(The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,Jiangsu Province 214035,China;University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]中国电子科技集团公司第58研究所,江苏无锡214035 [2]电子科技大学,成都610054

出　　处：《现代应用物理》2023年第2期170-175,共6页Modern Applied Physics

基　　金：微电子预先研究基金资助项目(31513040106)。

摘　　要：基于标准Bipolar-CMOS-DMOS(BCD)工艺研制的抗辐射电源管理芯片无法满足航天应用要求,抗辐射BCD工艺的发展严重制约了我国在航天领域核心器件的研制。与CMOS器件相比,LDMOS器件具有更高的工作电压和更多的介质结构,更易受到总剂量问题的困扰。本文基于标准0.18μm BCD工艺,开展了18 V NLDMOS器件总剂量辐射效应研究,提出了一种总剂量辐射加固工艺技术。采用离子注入和材料改性技术工艺,提高了浅槽隔离场区边缘的P型硅反型阈值,从而增强了NLDMOS器件的抗辐射能力。通过对比实验表明,当辐照总剂量为100 krad(Si)时,加固的NLDMOS器件的抗辐射性能明显优于非加固的器件。通过总剂量辐射加固工艺技术的研究,可有效提高器件的抗总剂量辐射能力,避免设计加固造成芯片面积增大的问题。Based on the standard process of 0.18μm Bipolar-CMOS-DMOS(BCD),the total dose radiation effect of 18 V NLDMOS devices is studied,and a total dose radiation hardening technology which uses ion implantation and material modification technologies to increase the P-type silicon inversion threshold at the edge of the STI field is proposed,so as to enhance the radiation hardening of NLDMOS devices.Experiments have shown that when the total irradiation dose is 100 krad(Si),the radiation hardening performance of hardened NLDMOS devices is significantly better than its original one.The research of total dose radiation hardening technology can effectively improve the total dose radiation resistance of devices,and avoid the problem of chip area increase caused by design hardening.

关 键 词：辐射加固 总剂量效应 浅槽隔离 0.18μm BCD LDMOS 

分 类 号：TL99[核科学技术—核技术及应用] TN29[电子电信—物理电子学]