2~6 GHz紧凑型、高效率GaN MMIC功率放大器  

2~6 GHz compact GaN power amplifier MMICs with high PAE

作　　者：邬佳晟 蔡道民[1] WU Jiasheng;CAI Daomin(The 13th Research Institute,CETC,Shijiazhuang Hebei 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《太赫兹科学与电子信息学报》2023年第8期1054-1058,1064,共6页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家核心器件资助项目(2017ZX03001024)。

摘　　要：基于0.25μm SiC衬底的GaN高电子迁移率晶体管(HEMT)工艺,根据有源器件的G_(max)和输出功率密度,选择末级功率器件尺寸并确定其最优阻抗;采用三级放大器,其栅宽比为1:4:16,实现高功率增益和高效率;利用等Q匹配技术,把偏置电路融入匹配电路中,实现简单、低损耗和宽带阻抗变换;借助电磁场寄生参数提取技术实现紧凑型芯片版图,尺寸为2.8 mm×2.0 mm。测试结果表明,偏置条件漏极电压U_(D)=28 V、U_(G)=-2.2 V,在2~6 GHz频率范围内,功率放大器增益大于24 dB,饱和输出功率大于43 dBm,功率附加效率大于45%,可广泛应用于电子对抗和电子围栏等领域。Based on the 0.25μm SiC substrate GaN High Electron Mobility Transistor(HEMT)process,the final power device size is selected and its optimal impedance is determined by the G_(max)and the unit output power density of the active device.The tertiary amplifier is adopted,and its gate width ratio is 1:4:16 to achieve high power gain and high efficiency.By using the equal-Q-matching technique,and integraing the bias circuit into the matching circuit,an impedance transformation is realized with simple,low loss and broadband.With the help of the extraction of parasitic parameters in electromagnetic fields,the compact chip is realized.The chip size of the Monolithic Microwave Integrated Circuit(MMIC)amplifier is 2.8 mm×2.0 mm.The test results show that in the 2~6 GHz frequency range,and under the conditions of the drain voltage of 28 V,the gate voltage-2.2 V,and continuous wave,the large signal gain of the MMIC amplifier is greater than 24 dB,the saturation output power is greater than 43 dBm,and the Power Additional Efficiency(PAE)is greater than 45%.The proposed paver amplifier can be widely used in electronic countermeasures and electronic fence.

关 键 词：紧凑 功率附加效率 宽带 增益 微波单片集成电路 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75