一种低噪声高电源抑制比的带隙基准源  

A Low Noise High PSRR Bandgap Reference

作　　者：徐敏航 张振伟 郎莉莉 刘海静[1] 单毅[1] 董业民[1,3,4] Xu Minhang;Zhang Zhenwei;Lang Lili;Liu Haijing;Shan Yi;Dong Yemin(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;Shanghai Simchip Technology Group Company,Shanghai 200120,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院,上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]上海芯炽科技集团有限公司,上海200120 [4]中国科学院大学材料与光电工程研究中心,北京100049

出　　处：《半导体技术》2023年第7期591-599,共9页Semiconductor Technology

摘　　要：基于0.18μm CMOS工艺设计了一种低噪声、高电源电压抑制比(PSRR)的新型带隙基准源(BGR)。使用低噪声的垂直双极结型晶体管取代MOS晶体管作为运算放大器输入,削减了低频闪烁噪声;通过引入三输入的运算放大器将电源扰动传递到电流管的栅极,极大程度地降低了电源纹波对输出基准电压的干扰;并通过RC低通滤波器进一步改善噪声和PSRR性能;利用修调电路修调工艺偏差,实现了良好的温度特性。实测结果表明,该BGR的PSRR在57.7 Hz下为-108 d B,与仿真结果基本一致(-102.3 d B@50 Hz);输出电压噪声在10 Hz时为42.20 n V/√Hz,通过新提出的测试方法在0.1~1 k Hz测得总噪声电压有效值低于0.503 5μV;在-40~125℃,基准电压温度系数可以修调至20×10^(-6)/℃以下,最小值仅14.09×10^(-6)/℃;BGR面积为254.1μm×370.0μm,功耗约为8.6μA@3 V。A novel low noise and high power supply rejection ratio(PSRR)bandgap reference(BGR)was proposed based on 0.18μm CMOS process.The low noise vertical bipolar junction transistors were employed to replace the input MOSFETs of the oprational amplifier to reduce the low-frequency flicker noise.An operational amplifier with three inputs was introduced to transmit the power supply disturbance to the gate of current MOSFET,thus greatly reduced the interference of power supply ripple on the output reference voltage.The noise and PSRR performances were further optimized by RC low-pass filter.The process deviation was adjusted to obtain good temperature characteristics by utilizing trim circuit.The mesurement results show that the proposed BCR has a PSRR of-108 dB at 57.7 Hz,which is basically consistent with simulation result(-102.3 dB@50 Hz).The output voltage noise is 42.20 nV/√Hz at 10 Hz and the total noise root-mean-square voltage at 0.1-1 kHz is less than 0.5035μV obtained by the new proposed measurement method.The reference voltage temperature coefficient can be trimmed to lower than 20×10^(-6)/℃at-40-125℃,and the minimum value is only 14.09×10^(-6)/℃.The BCR occupies an area of 254.1μm×370μm,and the power consumption is about 8.6μA@3 V.

关 键 词：带隙基准源(BGR) 低噪声 高电源电压抑制比(PSRR) CMOS工艺 低功耗 

分 类 号：TN710.4[电子电信—电路与系统] TN432