线性离子源反应离子刻蚀多晶硅绒面结构  

Texturing polycrystalline silicon wafer by linear ion source reactive ion etching

作　　者：孙涛 张忠强[1] 林本才 上官泉元 SUN Tao;ZHANG Zhongqiang;LING Bencai;SHANGGUAN Quanyuan(School of Mechanical Engineering,Jiangsu University,Zhenjiang 212000,Jiangsu Province,China;School of Materials Science and Engineering,Changzhou University,Changzhou 213000,Jiangsu Province,China;Changzhou Bitai Technology Co.,Ltd.,Changzhou 213000,Jiangsu Province,China)

机构地区：[1]江苏大学机械工程学院,江苏镇江212000 [2]常州大学材料科学与工程学院,江苏常州213000 [3]常州比太科技有限公司,江苏常州213000

出　　处：《化学工程》2023年第9期7-13,共7页Chemical Engineering(China)

基　　金：国家重点研发计划(2018YFB1500304)。

摘　　要：为探究硅片绒面结构受RIE(反应离子刻蚀)工艺参数的影响规律,采用二维流体力学漂移扩散有限元方法建立了矩形腔室电容耦合等离子体放电模型,研究射频功率和压强对等离子放电特性的影响规律,并通过实验研究不同功率(1500、1750、1900 W)和压强(22—30 Pa)工艺参数下,多晶硅片经刻蚀后其表面纳米结构特征。结果表明:通过采用Cl_(2)、O_(2)和SF_(6)作为反应气体刻蚀形成的纳米绒面结构宽度在196—480 nm、深度在120—280 nm。射频功率的增加使得中性活性物质数密度增加,刻蚀宽度随之增加,离子数密度以及电场强度增强使得刻蚀深度增加,刻蚀速率得到提高;压强的增加只增加刻蚀宽度,对刻蚀深度几乎无影响。该方法和结论可为RIE工艺参数控制和绒面结构调控提供参考。To explore how the textured structure of the silicon wafer was influenced by RIE(reactive ion etching),a rectangular chamber capacitive coupled plasma discharge model was established by the two-dimensional fluid mechanics drift-diffusion finite element method.The influence of RF(radio frequency)power and pressure on plasma discharge characteristics were studied,and the surface nanostructure characteristics of the polysilicon wafer under different power(1500,1750,1900 W)and pressure(22-30 Pa)were studied.The results show that the width of the nanostructure formed by etching Cl_(2),O_(2)and SF_(6)as the reaction gas is between 196 nm and 480 nm,the depth is between 120 nm and 280 nm.The density of neutral active substance increases and the etching width increases,while the density of ion and electric field increases and the etching depth increases,and the etching rate increases.The rise of pressure only increases the etching width,but has little effect on the etching depth.The method and conclusion can provide a reference for RIE process parameters control and nanostructure regulation.

关 键 词：反应离子刻蚀 线性离子源 多晶硅 电容耦合放电 绒面结构 

分 类 号：TM914[电气工程—电力电子与电力传动]