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作 者:吕振杰 庞雅文 杨伸勇 高向向 张丛春[1] LÜZhenjie;PANG Yawen;YANG Shenyong;GAO Xiangxiang;ZHANG Congchun(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)
机构地区:[1]上海交通大学微纳制造科学与技术国家重点实验室,上海200240 [2]上海交通大学电子信息与电气工程学院微纳电子学系,上海200240
出 处:《传感器与微系统》2023年第10期9-12,20,共5页Transducer and Microsystem Technologies
基 金:国家重点研发计划资助项目(2020YFB2009100)。
摘 要:铂(Pt)薄膜电阻具有体积小、结构简单、电阻温度系数(TCR)高和响应速度快的优点,结合MEMS技术可以实现发动机叶片温度的检测,但纯Pt与衬底之间的结合力较差,易导致薄膜失效。采用磁控溅射分别制备了氧化铂(Pt_(x)O_(y))和钛(Ti)过渡层的Pt薄膜电阻,分析了不同过渡层在不同温度(800,900,1000℃)下退火的微观形貌和电学性能,并分别测试了2种Pt电阻在900℃和1000℃下的稳定性。结果表明:1000℃退火的Pt/Pt_(x)O_(y)薄膜电阻的TCR值最大,达到了3434×10^(-6)/℃,Pt/Pt_(x)O_(y)薄膜电阻的电学性能优于Pt/Ti薄膜电阻,综合分析,900℃退火的Pt/Pt_(x)O_(y)薄膜电阻性能最优。Platinum(Pt)film resistors have the advantages of small size,simple structure,high temperature coefficient of resistance(TCR)and fast response speed.Combined with MEMS technology,the temperature of engine blades can be detected in-situ,but the bonding force between pure platinum and the substrate is poor,which will lead to failure of thin film.The platinum film resistors with platinum oxide(Pt_(x)O_(y))and Ti as the interlayer are prepared by magnetron sputtering,and the micro morphology and electrical properties of different interlayers at different annealing temperatures of 800,900,1000℃are analyzed.The stabilities of the two platinum resistors at 900℃and 1000℃are tested.The results show that the TCR of the Pt/Pt_(x)O_(y)thin film resistor annealed at 1000℃is the largest,reaching 3434×10^(-6)/℃.The electrical performance of the Pt/Pt_(x)O_(y)thin film resistor is better than that of the Pt/Ti thin film resistor.In general,the Pt/Pt_(x)O_(y)thin film resistor annealed at 900℃has the best performance.
关 键 词:磁控溅射 铂薄膜电阻 过渡层 退火温度 温度传感器
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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