碳化硅超结器件的研究进展  

Recent research progress of SiC superjunction devices

作　　者：张金平[1] 张琨 陈伟[1] 汪婕[1] 张波[1] ZHANG Jinping;ZHANG Kun;CHEN Wei;WANG Jie;ZHANG Bo(National Key Laboratory of Electronics Thin Film and Integrated Devices,University of Electronic Science and Technology,Chengdu,Sichuan 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件全国重点实验室,四川成都610054

出　　处：《机车电传动》2023年第5期36-45,共10页Electric Drive for Locomotives

基　　金：广东省基础与应用基础研究基金项目(2023A1515010068)。

摘　　要：碳化硅(SiC)材料由于其出色的物理和化学特性,非常适用于制造高温和大功率半导体器件。虽然SiC功率二极管和金属-氧化物-半导体场效应晶体管(MOSFET)展示了出色的器件性能,并获得广泛的应用,但是其单极型器件的一维理论极限仍限制了传统器件性能的进一步提升。超结(SJ)作为一种在硅基器件中广泛应用的技术,能明显改善器件击穿电压和比导通电阻之间的折中关系,提升器件的性能。近年来,SiC SJ器件逐渐成为研究的热点,并取得显著进展。文章从SiC SJ器件的设计与仿真模拟、模型研究和SJ工艺制备技术等方面论述了其最新研究现状及发展方向。Because of its excellent physical and chemical properties,silicon carbide(SiC)is suitable for manufacturing semiconduc‐tor devices working under high temperature and high power.Although SiC power diodes and metal-oxide-semiconductor field effect tran‐sistors(MOSFETs)have good device performance and are widely applied,the one-dimensional theoretical limit of them as unipolar de‐vices still limits the further performance improvement of conventional SiC power devices.As a technology widely used on silicon-based devices,superjunction(SJ)structure can significantly improve the tradeoff between the breakdown voltage and specific on-resistance and thus enhance the performance of the devices.In recent years,SiC SJ devices have become a hot research topic and significant progress has been made in relevant researches.The latest research progress and development direction in the device design and simulation,model‐ing research,SJ manufacturing process technology of SiC SJ devices were reviewed and summarized in this paper.

关 键 词：碳化硅 超结 二极管 金属-氧化物-半导体场效应晶体管 研究进展 

分 类 号：TN304.24[电子电信—物理电子学]