nBn结构InAs/GaSb超晶格中/长双波段探测器优化设计  

Optimization of nBn dual-band mid-/long-wavelength detector based on InAs/GaSb superlattice

作　　者：刘文婧 祝连庆[1,2] 张东亮 郑显通 杨懿琛 王文杰 柳渊 鹿利单 刘铭[3] Liu Wenjing;Zhu Lianqing;Zhang Dongliang;Zheng Xiantong;Yang Yichen;Wang Wenjie;Liu Yuan;Lu Lidan;Liu Ming(Beijing Engineering Research Center of Optoelectronic Information and Instrument,Beijing Information Science&Technology University,Beijing 100016,China;Instrumentation Science and Optoelectronic Engineering College,Beijing Information Science&Technology University,Beijing 100016,China;North China Institute of Optoelectronic Technology,Beijing 100015,China)

机构地区：[1]北京信息科技大学光电信息与仪器北京市工程研究中心,北京100016 [2]北京信息科技大学仪器科学与光电工程学院,北京100016 [3]华北光电技术研究所,北京100015

出　　处：《红外与激光工程》2023年第9期73-85,共13页Infrared and Laser Engineering

基　　金：国家自然科学基金项目(62105039);北京学者计划研究项目(BJXZ2021-012-00046);北京教育委员会研究项目(KM202111232019);北京信息科技大学研究项目(2022XJJO7)。

摘　　要：双波段红外探测可对复杂的红外背景进行抑制,在军用目标识别、医疗诊断和污染监测等方面有重要应用价值。基于二类超晶格的双波段红外探测器在成本和性能方面具有很大的优势,成为新型红外探测器领域的研究热点。然而其暗电流和串扰会极大地影响双波段红外探测器的性能。因此,设计了nBn结构的InAs/GaSb超晶格中/长波双波段红外探测器,通过仿真比较不同结构的器件在不同偏压下的中波/长波通道的响应率和暗电流大小,分析势垒层厚度、吸收层厚度、不同区域的掺杂对暗电流和串扰的影响,从而得到最佳的模型参数达到减小暗电流和降低串扰的效果。仿真结果显示:nBn结构的中/长波双波段红外探测器在77 K下,中波通道的暗电流密度为4.5×10^(-5)A·cm^(-2),在0.3 V偏压下,2μm处的峰值量子效率为64%,探测率可以达到3.9×10^(11)cm·Hz^(1/2)·W^(-1);长波通道的暗电流密度为1.3×10^(-4)A·cm^(-2),在-0.3 V的偏压下,5.6μm处的峰值量子效率为48%,探测率可以达到4.1×10^(11)cm·Hz^(1/2)·W^(-1)。相关结论可为器件设计和加工提供参考。Objective Infrared photodetectors are useful for a variety of military and civil applications,such as space science,military equipment,industrial production and so on.Presently,infrared photodetectors are developing towards high performance and low cost to meet the technical requirements.Compared to single color detectors,dual-band infrared detectors covering different atmospheric windows allow for simultaneous acquisition of target information in both wavelengths which is the most obvious advantage.Therefore,the dual-band capability of the detector makes it possible to discriminate between different temperatures and objects,improving the accuracy of temperature measurement and target recognition.Complex infrared backgrounds can be suppressed and it is possible to reduce the false alarm rates significantly in early warning,searching and tracking systems.Mid-long wavelength dual-band infrared detectors based on type Ⅱ superlattice have great advantages in terms of cost and performance,and have become a popular research topic in the field of new infrared detectors.However,infrared detectors need to reduce dark current density and crosstalk to achieve better performance.The nBn superlattice detector has a unique band gap engineering approach,which can work at a higher temperature and has better thermal stability compared to traditional single color detectors.This leads to better performance and longer operating life in harsh environments.Additionally,the nBn structure has a high absorption coefficient,resulting in a high detectivity and low noise.However,the development of nBn superlattice dual-band detectors faces several challenges,such as the difficulties in fabrication and the limitations in performance.The fabrication of the nBn structure requires precise control of the layer thickness and doping levels,which is a complex process.Besides,the performance of the nBn detector is limited by dark current and temperature.These issues need to be addressed through further research and development.To this end,the pape

关 键 词：红外探测器 双波段 NBN INAS/GASB超晶格 暗电流 

分 类 号：TN215[电子电信—物理电子学]