不同偏置下增强型AlGaN/GaN HEMT器件总剂量效应研究  

Total ionizing dose effect of enhanced AlGaN/GaN HEMT devices under different bias

作　　者：邱一武 郭风岐 殷亚楠 张平威 周昕杰[1] QIU Yiwu;GUO Fengqi;YIN Yanan;ZHANG Pingwei;ZHOU Xinjie(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214035

出　　处：《核技术》2023年第11期55-63,共9页Nuclear Techniques

摘　　要：氮化镓功率器件凭借优异性能被抗辐照应用领域重点关注,为探究氮化镓功率器件抗γ射线辐照损伤能力,明确其辐射效应退化机制,针对增强型AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件开展不同偏置(开态、关态和零偏置)条件下的γ射线辐照与不同温度的退火试验,分析器件电学性能同偏置条件和退火环境之间的响应规律。结果表明:随着γ射线辐照剂量的增加,器件阈值电压负漂,跨导峰值、饱和漏电流和反向栅泄漏电流逐渐增加,且在开态偏置条件下器件的电学特性退化更加严重;此外,高温环境下退火会导致器件的电学性能恢复更加明显。分析认为γ射线辐照剂量越高,产生的辐照缺陷越多,同时栅极偏压会降低辐照引发的电子-空穴对的初始复合率,逃脱初始复合的空穴数量增多,进一步增加了缺陷电荷的浓度;而高温环境会导致器件发生隧穿退火或热激发退火,有助于器件性能恢复。氮化镓功率器件的辐照损伤过程及机理研究,为其空间环境应用的评估验证提供了数据支撑。[Background]Gallium nitride(GaN)power devices have garnered attention in the anti-irradiation field owing to their excellent performance.[Purpose]This study aims to explore the anti-γ-ray damage ability of gallium nitride power devices and clarify the mechanism of radiation degradation.[Methods]Firstly,the domestically produced commercial NP20G65D6 P-GaN gate enhanced AlGaN/GaN High Electron Mobility Transistor(HEMT)device was taken as test sample.Then,^(60)Coγ-ray source with different irradiation doses of 0.3 Mrad(Si),0.6 Mrad(Si),and 1.0 Mrad(Si),respectively,was employed to conduct total dose irradiation experiments under different bias(ON-state,OFF-state,and GND-state)conditions and annealing tests at different temperatures for enhanced AlGaN/GaN HEMT devices.Finally,the response law between the electrical performance of the device and the bias condition and annealing environment were analyzed to reveal the degradation mechanism of device sensitive parameters.[Results]The results indicate that as theγ-ray irradiation dose increases,the device's threshold voltage exhibits a negative drift,and the transconductance peak,saturation leakage current,and reverse gate leakage current gradually increase.Simultaneously,the electrical characteristics of the device deteriorate more rapidly under the ONstate bias condition.Furthermore,annealing at high temperatures leads to a more apparent recovery of the electrical properties of devices.The analysis demonstrates that the higher theγ-ray irradiation dose,the more radiation defects are generated.The gate bias reduces the initial recombination rate of electron-hole pairs caused by irradiation,increases the number of holes escaping the initial recombination,and further increase the concentration of defect charge.The high-temperature environment causes tunneling annealing or thermal excitation annealing,which is conducive to the recovery of device performance.[Conclusions]The radiation damage process and mechanism of gallium nitride power devices of this study provides d

关 键 词：增强型AlGaN/GaN HEMT器件 总剂量效应 偏置条件 电学性能 退火恢复 

分 类 号：TN386[电子电信—物理电子学]