硼源漏区离子注入及退火后的方块电阻均匀度控制技术分析  

Analysis of Control Technology for Uniformity of Block Resistance after Ion Implantation and Annealing in the Leakage Zone of Boron Source

作　　者：任杰 王元之 张翔 王世贵 马美玲 廖强 REN Jie;WANG Yuanzhi;ZHANG Xiang;WANG Shigui;MA Meiling;LIAO Qiang(Tianshui Tianguang Semiconductor Co.,Ltd.,Gansu 741000,China)

机构地区：[1]天水天光半导体有限责任公司,甘肃741000

出　　处：《集成电路应用》2023年第10期33-35,共3页Application of IC

摘　　要：阐述离子注入受到很多因素的影响,这些因素会导致剂量不能够均匀分布。分析Varian80-10注入机的真空系统性能改进、离子源系统性能参数提升措施,实现注入均匀,使方块电阻阻值更加均匀。This paper describes that ion implantation is influenced by many factors,which can lead to uneven dose distribution.Analyze the vacuum system performance improvement and ion source system performance parameter improvement measures of Varian80-10 injection machine,achieve uniform injection,and make the block resistance value more uniform.

关 键 词：集成电路制造 离子注入 注入均匀 方块电阻 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN47