红外发光二极管对固体继电器漏电流的影响  

Influence of Infrared Light Emitting Diode on the Leakage Current of Solid State Relays

作　　者：李建华 闫军政 宋伟 洪浩 LI Jianhua;YAN Junzheng;SONG Wei;HONG Hao(Guizhou Zhenhua Qunying Electric Appliance Co.,Ltd.,Guiyang 550018,China)

机构地区：[1]贵州振华群英电器有限公司,贵阳550018

出　　处：《电子与封装》2024年第1期68-72,共5页Electronics & Packaging

摘　　要：固体继电器在军工和民用市场被使用得越来越广泛,大量替换了传统的电磁继电器,并且固体继电器的隔离方式也从变压器隔离向着光隔离转变,光隔离固体继电器已经成为很多厂家的设计主流。光隔离固体继电器被大量使用,但是在使用红外发光二极管等发光器件时,如果选择的红外发光二极管的波长和输出场效应管的禁带宽度不匹配,处理不当时会造成固体继电器的输出漏电流超标。通过光电效应分析了红外发光二极管对固体继电器输出漏电流的影响,通过试验测试验证了这种影响机理,并提出了改进方法。Solid state relays are increasingly used in the military and civilian markets,replacing traditional electromagnetic relays in large quantities.The isolation of solid state relays has changed from transformer isolation to optical isolation.Optical isolation solid state relays have become the mainstream design of many manufacturers.Optical isolated solid state relays are used in large numbers,but when using light emitting devices such as infrared light emitting diodes,if the wavelength of infrared light emitting diodes selected does not match the bandgap width of semiconductor devices such as field effect transistors,improper handling will result in the output leakage currents of the solid state relays being exceeded.The influence of infrared light emitting diodes on the output leakage current of solid state relays is analyzed through photoelectric effect,the mechanism of this influence is verified through experimental tests,and an improvement method is proposed.

关 键 词：发光二极管 场效应管 禁带宽度 固体继电器 光电效应 

分 类 号：TN383.1[电子电信—物理电子学] TM583[电气工程—电器]