10~20GHz宽带低噪声放大器的设计和实现  

Design and Implementation on 10~20GHz Wideband Low Noise Amplifier

作　　者：李鑫 肖曼琳[1] 杜鑫威 肖帅 LI Xin;XIAO Manlin;DU Xinwei;XIAO Shuai(Shanghai University of Engineering Science,Urban Rail Transit Institute,Shanghai 201620,China)

机构地区：[1]上海工程技术大学城市轨道交通学院,上海201620

出　　处：《集成电路应用》2024年第1期11-13,共3页Application of IC

摘　　要：阐述一款采用0.25 GaAs pHEMT工艺、基于MMIC技术的10~20GHz宽带低噪声放大器设计。联合仿真结果表明,带内增益高达28dB,噪声系数低于1.9dB,输入和输出回波损耗均低于-15dB。该芯片具有宽带宽、集成度高和功耗低的特点。This paper describes the design of a 10~20GHz broadband low noise amplifier based on MMIC technology,using 0.25 GaAs pHEMT technology.The co-simulation results show that the inband gain is up to 28dB,the noise factor is lower than 1.9dB,and the input and output return loss are lower than-15dB.The chip has the characteristics of wide broadband,high integration and low power consumption.

关 键 词：电路设计 低噪声放大器 MMIC 电流复用 GAAS 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN722.3