VGF半绝缘GaAs单晶片的碱腐蚀特性研究  

Study On The Alkali Corrosion Characteristics of VGF Semi-insulated GaAs Wafer

作　　者：于妍[1] 吕菲[1] 李纪伟 康洪亮[1] YU Yan;LYU Fei;LI Jiwei;KANG Hongliang(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2024年第1期48-50,共3页Equipment for Electronic Products Manufacturing

摘　　要：研究了半绝缘GaAs的碱性腐蚀液的温度、配比对半绝缘GaAs晶片的几何参数、粗糙度、腐蚀速率等的影响,根据碱性腐蚀原理;解释了腐蚀液温度对晶片翘曲度的改善原因,以及腐蚀速率随温度和配比的变化规律;实验结果表明在碱性腐蚀液中晶片的TTV和粗糙度比较稳定。The geometric parameters,roughness and corrosion rate of semi-insulating GaAs wafer affected by the temperature and ratio of alkaline corrosion liquid for semi-insulating GaAs wafer are studied in this paper.According to the principle of alkaline corrosion,explaining the warpage improvement of GaAs wafer by the corrosion liquid temperature,and the corrosion rate variation with temperature and ratio.The experiment results showed the TTV and roughness of GaAs wafer are more stable in alkaline corrosion solution.

关 键 词：垂直梯度凝固法(VGF) 半绝缘 砷化镓(GaAs) 碱性腐蚀 

分 类 号：TN304.2[电子电信—物理电子学]