Realtime observation of“spring fracture”like AlGaN/GaN HEMT failure under bias  

作　　者：Qing ZHU Zhenni WANG Yuxiang WEI Ling YANG Xiaoli LU Jiejie ZHU Peng ZHONG Yimin LEI Xiaohua MA 

机构地区：[1]School of Microelectronics,Xidian University,Xi’an 710071,China [2]State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology,Xidian University,Xi’an 710071,China [3]School of Advanced Materials and Nanotechnology,Xidian University,Xi’an 710071,China

出　　处：《Science China(Information Sciences)》2024年第1期299-301,共3页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant Nos.62204185,62274130);Fundamental Research Funds for the Central Universities(Grant No.XJS221112)。

摘　　要：The AlGaN/GaN HEMTs have been considered promising candidates for high-frequency and high-power applications,while the reliability issues greatly limit the commercialization of AlGaN/GaN HEMTs.In the past,the research on the reliability of devices was often based on Raman spectroscopy,cathodoluminescence,and TEM after failure of the devices,which is often considered to be the laborious and complicated“archaeological”kind of analysis[1].

关 键 词：ALGAN/GAN HEMTS HEMT 

分 类 号：TN386[电子电信—物理电子学]