基于单片集成电路的180 GHz大功率倍频器  

180 GHz High Power Frequency Multiplier Based on Monolithically Integrated Circuit

作　　者：郭艳敏 张立森[1,2] 顾国栋 宋旭波[1,2] 郝晓林 GUO Yanmin;ZHANG Lisen;GU Guodong;SONG Xubo;HAO Xiaolin(The 13th Research Institute,CETC,Shijiazhuang,050051,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Shijiazhuang,050051,CHN)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《固体电子学研究与进展》2023年第6期486-491,共6页Research & Progress of SSE

摘　　要：随着工作频率的提升,太赫兹倍频链路对第一级倍频器的输出功率要求越来越高,提升其功率承受能力是解决该问题的主要途径之一。设计并制作出高击穿的氮化镓肖特基势垒二极管,并与砷化镓二极管进行了对比。氮化镓二极管大的电容调制能力弥补了高电阻导致的低效率,使其具有与砷化镓倍频器相当的转换效率。针对传统混合集成电路结构的氮化镓倍频器连续波功率低的问题,研制出基于高热导率碳化硅单片集成电路形式的180 GHz氮化镓大功率倍频器,并与砷化镓倍频器进行了性能对比。在600 mW输入功率下,两种倍频器的转换效率均大于20%,输出功率大于120 mW。氮化镓二极管的高击穿特性和碳化硅衬底的高导热性使得氮化镓倍频器在大功率输入下具有更好的性能。With the increased operating frequency,higher output power of the first-stage frequen⁃cy multiplier is required in THz frequency doubling chains.Improving its power-handling capacity is one of the main way to solve this problem.GaN Schottky barrier diodes with high breakdown voltage were designed and fabricated,and compared with GaAs diodes.The low efficiency caused by high re⁃sistance was compensated by the large capacitance modulation ability of GaN diode,which made it have the conversion efficiency equivalent to that of GaAs multiplier.Aiming at the problem of low con⁃tinuous wave power of GaN doubler with traditional hybrid integrated circuit structure,a 180 GHz GaN high power doubler based on high thermal conductivity SiC monolithic integrated circuit was de⁃veloped and compared with GaAs doubler.With the input power of 600 mW,the conversion efficien⁃cy and output power of both the two doublers are more than 20%and 120 mW,respectively.The high breakdown characteristics of GaN SBDs and the high thermal conductivity of SiC substrate make GaN doubler have better performance under higher input power.

关 键 词：氮化镓 肖特基二极管 倍频器 大功率 单片集成电路 

分 类 号：TN771[电子电信—电路与系统]