垂直氮化镓沟槽栅极场效应管的优化设计  

Optimized Design of GaN Vertical Trench-gate Field-effect Transistor

作　　者：杨华恺 刘新科[1] 姜梅[1] 何仕杰 贺威[1] YANG Huakai;LIU Xinke;JIANG Mei;HE Shijie;HE Wei(College of Electronics and Information Engineering,Shenzhen University,Shenzhen,Guangdong,518060,CHN)

机构地区：[1]深圳大学电子与信息工程学院,广东深圳518060

出　　处：《固体电子学研究与进展》2024年第1期19-23,共5页Research & Progress of SSE

基　　金：2022年深圳市基础研究稳定支持项目(20220807204743001);2022深圳科技计划重点项目(JCYJ202220818103410022);2022年技术攻关重点项目(JSGG20220831093005009)。

摘　　要：在传统的氮化镓沟槽栅极场效应管的基础上,通过引入AlGaN层,在异质结界面处形成二维电子气减小器件的导通电阻,并对漂移层的厚度和掺杂浓度进行讨论,使用TCAD软件对器件进行设计优化。最终优化后的漂移层厚度为6μm,掺杂浓度为5×10^(16)cm^(-3)。器件获得了较低的导通电阻R_(on)=0.47 mΩ·cm^(2),较高的击穿电压V_(BR)=2880 V和品质因子FOM=17.6 GW·cm^(-2)。结果显示出了沟槽栅极垂直氮化镓场效应管在高压大电流应用场景下的优势。Based on traditional trench gate gallium nitride field-effect transistors,an AlGaN layer was introduced to reduce the on-state resistance of the device using two dimensional electron gas.Dis-cussions were conducted on the thickness and doping concentration of the drift layer,and device opti-mization was performed using TCAD software.The final optimized drift layer thickness was deter-mined to be 6μm,with a doping concentration of 5×10^(16) cm^(-3).The device achieves a low on-state re-sistance(R_(on))of 0.47 mΩ·cm^(2),a high breakdown voltage(V_(BR))of 2880 V,and a figure of merit(FOM)of 17.6 GW·cm^(-2).The results demonstrate the advantages of the trench gate vertical GaN FET for high-voltage,high-current applications.

关 键 词：氮化镓 沟槽栅极场效应晶体管 Baliga品质因子 击穿电压 导通电阻 

分 类 号：TN386[电子电信—物理电子学]