溅射压强对MoZnO光电晶体管性能的影响  

Effect of sputtering pressure on the performance of MoZnO phototransistor

作　　者：王晗 高晓红[1] 张悦[1] 孙玉轩 王森 WANG Han;GAO Xiao-hong;ZHANG Yue;SUN Yu-xuan;WANG Sen(School of electrical and computer science,Jilin Jianzhu university,Changchun 130118,China)

机构地区：[1]吉林建筑大学电气与计算机学院,长春130118

出　　处：《吉林建筑大学学报》2023年第6期73-79,共7页Journal of Jilin Jianzhu University

基　　金：吉林省科技厅科技发展计划项目(20190303114SF)。

摘　　要：采用射频磁控溅射法在表面长有SiO2绝缘层的P-Si片上沉积MoZnO薄膜,并制作成光电晶体管,研究了不同溅射压强对MoZnO薄膜及器件性能的影响.实验结果表明,当溅射压强为10 mTorr时,MoZnO薄膜的晶粒尺寸最大,结晶程度最好,其在可见光区域的平均透过率均在95%以上.随着溅射压强的提高,MoZnO薄膜的光学带隙逐渐变窄.在10 mTorr溅射压强条件下MoZnO TFT的电学性能最佳,其电流开关比达到了3.43×10^(7),亚阈值摆幅为0.983 V/dec,该器件也可应用在对波长为254 nm的光探测上,其响应度、探测度和灵敏度可分别达到21.5 A/w,2.9×10^(12)Jones和1.9×10^(7).MoZnO thin films were deposited on P-Si sheets with SiO 2 insulating layer on the surface by RF magnetron sputtering and fabricated into phototransistors.The effects of sputtering pressure on the properties of MoZnO thin films and devices were studied.The experimental results show that when the sputtering pressure is 10 mTorr,the MoZnO films have the largest grain size and the best crystallization degree,and their average transmittance in the visible region is above 95%.The electrical performance of MoZnO TFTs was best at 10 mTorr sputtering pressure,with a current switching ratio of 3.43×10^(7) and a sub-threshold swing of 0.983 V/dec,while the device can also be applied to the optical detection of the wavelength of 254 nm,and its responsivity,detectivity and sensitivity can reach 21.5 A/w,2.9×10^(12) Jones and 1.9×10^(7) respectively.

关 键 词：MoZnO 光电晶体管 磁控溅射 溅射压强 

分 类 号：TB383[一般工业技术—材料科学与工程]