对MIS结构热弛豫时间的分析计算  

Analysis And Calculation of the Thermal Relaxation Time for MIS Structure

作　　者：程骏骥 朱麒瑾 徐子逸 王俊凯 杨洪强[1] CHENG Junji;ZHU Qijin;XU Ziyi;WANG Junkai;YANG Hongqiang(School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu 610054,China;Institute of Electronic and Information Engineering of UESTC in Guangdong,Dongguan 523808,China)

机构地区：[1]电子科技大学集成电路科学与工程学院(示范性微电子学院),成都610054 [2]电子科技大学广东电子信息工程研究院,东莞523808

出　　处：《电气电子教学学报》2024年第1期137-140,共4页Journal of Electrical and Electronic Education

基　　金：中国博士后科学基金(2020M683286);四川省科技计划(2021YJ0373);上海交通大学-西安电子科技大学教育部重点实验室联合基金(LHJJ/2021-01);广东省基础与应用基础研究基金(2021A1515011412);电子科技大学课程思政示范课建设项目(2021KCSZ0127)。

摘　　要：对MIS(金属-绝缘层-半导体)结构从深耗尽过渡至强反型状态所需的热弛豫时间进行了研究。通过建立较教科书更精确的模型,对热弛豫时间τth与深耗尽时耗尽区宽度x d0、强反型时耗尽区最大宽度x dm、耗尽区内少子净产生率G和掺杂浓度N D等关键物理量之间的关联进行了推导,并基于MEDICI平台对推导结果完成了仿真验证,从而加强了学生对半导体表面效应的理解,也利于他们未来从事半导体方面的创新研究。The thermal relaxation time(τth)for a metal-insulation-semiconductor(MIS)structure transferred from the deeply-depleted state to strong-inversion state is analyzed.By establishing a more accurate model than that in textbooks and performing the corresponding mathematical derivation,the relationship among theτth,the depleted region width(x d0),the maximum depleted region width(xdm),the net generation rate of minor carriers(G)and the doping concentration(N D)is revealed.Furthermore,the theoretical analyses are verified by the simulation based on MEDICI,which is beneficial for the students to have systematic comprehension on the semiconductor surface effects and also helps them to engage in innovative research on semiconductors in the future.

关 键 词：半导体物理 MIS结构 热弛豫时间 

分 类 号：O473[理学—半导体物理]