碳化硅化学机械抛光中材料去除非均匀性研究进展  

Research Progress on Material Removal Non-Uniformity in Silicon Carbide Chemical Mechanical Polishing

作　　者：孙兴汉 李纪虎 张伟 曾群锋[2] 张俊锋[3] SUN Xinghan;LI Jihu;ZHANG Wei;ZENG Qunfeng;ZHANG Junfeng(Power China(Xi’an)Port Nevigation Shipbuilding Technology Co.,Ltd.,Xi’an 710100,China;Xi’an Jiaotong University Laboratory of Education Ministry for Modern Design and Rotor-Bearing System,Xi’an 710049,China;Shanghai Marine Equipment Research Institute,Shanghai 200031,China)

机构地区：[1]中电建(西安)港航船舶科技有限公司,西安710100 [2]西安交通大学现代设计及转子轴承系统教育部重点实验室,西安710049 [3]上海船舶设备研究所,上海200031

出　　处：《人工晶体学报》2024年第4期585-599,共15页Journal of Synthetic Crystals

基　　金：陕西省自然科学基金(2022JM-251)。

摘　　要：化学机械抛光已经成为半导体制造中关键的工艺步骤之一,该技术是目前实现碳化硅晶片超精密加工的一种常用且有效的方法,可用于加工晶片表面,以获得高材料去除率、高表面质量和高表面平整性的晶片。然而,在碳化硅晶片化学机械抛光中,晶片表面材料去除非均匀性一直是一个具有挑战性的问题,减小晶片表面材料去除非均匀性对确保半导体器件的高性能和稳定性至关重要。本文介绍了碳化硅材料的性质及应用与化学机械抛光工艺,研究了不同碳化硅化学机械抛光技术的材料去除机理、不同化学机械抛光技术的发展状况和性能及优缺点,综述了碳化硅晶片化学机械抛光中材料去除非均匀性影响因素,如:抛光压力、抛光液(磨粒)和转速等因素,最后对未来碳化硅化学机械抛光中材料去除非均匀性研究做出了展望。Chemical mechanical polishing(CMP)has become a critical process step in semiconductor manufacturing.This technique is a commonly used and effective method for achieving ultra-precision processing of silicon carbide wafers,playing a key role in the fabrication of semiconductor devices.CMP is employed to process the wafer surface,resulting in high material removal rates,excellent surface quality,and superior surface planarity of the chips.However,in the CMP of silicon carbide(SiC)wafers,the non-uniformity of material removal on the chip surface has been a challenging issue.Reducing the non-uniformity of material removal is essential for ensuring the high performance and stability of semiconductor devices.This article introduces the properties and applications of silicon carbide,along with the CMP process.It investigates the material removal mechanisms of different CMP techniques for silicon carbide,explores the development status of various CMP technologies,and evaluates the performance and pros and cons of different CMP techniques.The article provides an overview of the factors influencing material removal non-uniformity in CMP of silicon carbide wafers,including factors such as polishing pressure,polishing slurry(abrasives),and rotation speed.Finally,the article provides prospects for future research on material removal non-uniformity in silicon carbide CMP.

关 键 词：碳化硅 化学机械抛光 材料去除 抛光压力 抛光液 抛光垫 

分 类 号：TG175[金属学及工艺—金属表面处理] TM23[金属学及工艺—金属学] TQ163.4[一般工业技术—材料科学与工程]