U型高K介质膜槽栅垂直场板LDMOS  

An U-Shaped High-K Dielectric Film Trench Gate Vertical Field Plate LDMOS

作　　者：钱图 代红丽[1] 周春行 陈威宇 QIAN Tu;DAI Hongli;ZHOU Chunxing;CHEN Weiyu(School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,P.R.China)

机构地区：[1]天津理工大学集成电路科学与工程学院,天津300384

出　　处：《微电子学》2024年第1期110-115,共6页Microelectronics

基　　金：天津市大学生创新创业训练计划项目(202210060101)。

摘　　要：近年来,随着汽车电子和电源驱动的发展,集成度较高的LDMOS作为热门功率器件受到了关注,如何提高其击穿电压与降低其比导通电阻成为提高器件性能的关键。基于SOI LDMOS技术,文章提出了在被4μm的高K介质膜包围的SiO_(2)沟槽中引入垂直场板的新型结构。与传统沟槽LDMOS相比,垂直场板和高K介质膜充分地将电势线引导至沟槽中,提高了击穿电压。此外垂直场板与高K介质和漂移区形成的MIS金属-绝缘层-半导体电容结构能增加漂移区表面的电荷量,降低比导通电阻。通过二维仿真软件,在7.5μm深的沟槽中引入宽0.3μm、深6.8μm的垂直场板,实现了具有300 V的击穿电压和4.26 mΩ·cm^(2)的比导通电阻,以及21.14 MW·cm^(-2)的Baliga品质因数的LDMOS器件。In recent years,with the development of automotive electronics and power drives,LDMOS with higher integration has received attention as a popular power device.How to increase its breakdown voltage and reduce its specific on-resistance has become the key to improve the device's performance.Based on SOI LDMOS technology,a novel structure with a vertical field plate introduced in the SiO_(2) trench surrounded by a 4μm high-K dielectric film was proposed in this paper.Compared with the traditional trench LDMOS,the vertical field plate and the high-K dielectric film fully guide the potential lines into the trench,which improves the breakdown voltage.In addition,the metal-insulator-semiconductor capacitive structure formed by the vertical field plate,the high-K dielectric and the drift region can increase the amount of charge on the surface of the drift region and reduce the specific on-resistance.Through 2-D simulation software,by introducing a vertical field plate with a width of 0.3μm and a depth of 6.8μm into a depth of 7.5μm trench,an LDMOS was realized,with the breakdown voltage of 300 V,the specific on-resistance of 4.26 mΩ·cm^(2),and the Baliga quality factor of 21.14 MW·cm^(-2).

关 键 词：LDMOS 高K介质 垂直场板 击穿电压 比导通电阻 

分 类 号：TN386.1[电子电信—物理电子学]