SiC基GaN上多晶金刚石散热膜生长及其影响  

Growth and Influence of Polycrystalline Diamond Heat Dissipation Film on SiC⁃Based GaN

作　　者：盛百城[1] 刘庆彬[1,2] 何泽召 李鹏雨[1,2] 蔚翠 冯志红 Sheng Baicheng;Liu Qingbin;He Zezhao;Li Pengyu;Yu Cui;Feng Zhihong(The 13th Research Institute,CETC,Shijiazhuang 050051,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《半导体技术》2024年第5期455-460,共6页Semiconductor Technology

基　　金：国家重点研发计划(2022YFB3404304,2022YFB3608603)。

摘　　要：通过微波等离子体化学气相沉积(MPCVD)法,在SiC基GaN高电子迁移率晶体管(HEMT)异质结构材料上生长多晶金刚石散热膜,采用光学显微镜(OM)、拉曼光谱、非接触霍尔测试系统、X射线衍射(XRD)和扫描电子显微镜(SEM)对生长样品进行表征,研究了生长温度、多晶金刚石散热膜厚度对GaN HEMT异质结构材料性能的影响。测试结果表明,当多晶金刚石生长温度为625℃,散热膜厚度为20μm时,GaN材料载流子迁移率降低9.8%,载流子浓度上升5.3%,(002)衍射峰半高宽增加40%。生长温度越高,金刚石散热膜的生长速率越快。当金刚石散热膜厚度相差不大时,生长温度越高,GaN所受拉应力越大,材料电特性衰退越明显。多晶金刚石高温生长过程中,金刚石引入的应力未对GaN结构产生破坏作用,GaN材料中没有出现孔洞等缺陷。A polycrystalline diamond heat dissipation film was grown on SiC⁃based GaN high elec⁃tronic mobility transistor(HEMT)heterostructure material by the microwave plasma chemical vapor deposition(MPCVD)method.The grown samples were characterized by optic microscopy(OM),Raman spectroscopy,contactless Hall test system,X⁃ray diffraction(XRD)and scanning electron microscopy(SEM).The effects of growth temperature and thickness of polycrystalline diamond heat dissipation film on the properties of GaN HEMT heterostructure materials were studied.The test results indicate that when the growth temperature of polycrystalline diamond is 625℃and the thickness of the heat dissipation film is 20μm,the carrier mobility of GaN material decreases by 9.8%,the carrier con⁃centration increases by 5.3%,and the full width at half maximum of the(002)diffraction peak increases by 40%.The higher the growth temperature,the faster the growth rate of polycrystalline diamond heat dissipation film.When the thickness of diamond heat dissipation film is not significantly different,the higher the growth temperature,the greater the tensile stress on GaN,and the more obvious the degradation of material electrical performance.During the high⁃temperature growth process of polycrystalline diamond,the stress introduced by diamond does not cause any damage to the GaN structure,and no hole defects are found in the GaN material.

关 键 词：多晶金刚石 散热膜 氮化镓 微波等离子体化学气相沉积(MPCVD)法 电性能 应力 孔洞缺陷 

分 类 号：TN304.055[电子电信—物理电子学]