一种抗辐射Trench型N 30 V MOSFET器件设计  

Design of a Radiation Resistant Trench N 30 V MOSFET Device

作　　者：廖远宝 谢雅晴 LIAO Yuanbao;XIE Yaqing(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2024年第5期72-78,共7页Electronics & Packaging

摘　　要：由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N30VMOSFET器件。实验结果显示,产品击穿电压典型值达42V,特征导通电阻为51mΩ·mm^(2)。在^(60)Co γ射线100krad(Si)条件下,器件阈值电压漂移仅为-0.3V,漏源漏电流从34nA仅上升到60nA。采用能量为2006MeV、硅中射程为116μm、线性能量传输(LET)值为75.4MeV·cm^(2)/mg的^(118)Ta离子垂直入射该器件,未发生单粒子事件。Due to the Trench structure's advantages of reducing cell pitch,increasing the channel density and delimiting JFET resistance,Trench MOSFET has been widely used in low voltage products.Based on the study of the radiation resistance mechanism and radiation harden technology,a novel Trench N 3o V MOSFET device with radiation resistance is proposed.The experimental results show that the device has typical breakdown voltage of 42 V and specific on-resistance of 51 mΩ·mm^(2).The shift of threshold voltage is only-0.3 V,and the current of drain to source is from 34 nA to 60 nA under ^(60)Co γ-ray of 100 krad(Si).The single event phenomenon does not happen in the device with ^(118)Ta ions incident vertically at an energy of 2006 MeV,a range of 116μm and a linear energy transfer(LET)value of 75.4 MeV·cm^(2)/mg in silicon material.

关 键 词：总剂量 单粒子烧毁 单粒子栅穿 MOSFET TRENCH 

分 类 号：TN386.1[电子电信—物理电子学]