硅片预清洗处理对LPCVD多晶硅薄膜生长的影响分析  

Analysis of Effect of Pre-cleaning Treatment on the Growth of LPCVD Polysilicon Process Thin Films

作　　者：郭国超 姜波 GUO Guochao;JIANG Bo(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)

机构地区：[1]中国上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2024年第4期48-49,共2页Application of IC

摘　　要：阐述不同预清洗条件下,晶片表面化学键状态的变化对LPCVD多晶硅沉积速率和晶粒大小的影响,通过实验优化预清洗条件,实现颗粒数降低,同时保持多晶硅薄膜的晶粒大小和沉积速率的稳定。This paper describes the effects of wafer surface chemical bonding status on the LPCVD polysilicon deposition rate and crystal size for different cleaning condition in the first time,by optimizing the process,the defect level can be reduced while keeping the deposition rate stability and crystal size of the polysilicon silicon film.

关 键 词：集成电路制造 LPCVD 多晶硅薄膜 预清洗 

分 类 号：TN405[电子电信—微电子学与固体电子学]